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Consider a pseudo-NMOS inverter fabricated in 0.35-um CMOS technology for which assuming lambda1 = lambda2 = 0, Vtn = -Vtp = Vt, kn = 300 uA/V2, Vt = 0.3 V, VDD = 2 V, and kn = 3kp. (a) Find VOH and VOL. (b) Evaluate the values of VOH and VOL and find the average power dissipated in the inverter, assuming it spends half the time in each of its two states.

Consider a pseudo-NMOS inverter fabricated in 0.35-um CMOS technology for which assuming lambda1 = lambda2 = 0, Vtn = -Vtp = Vt, kn = 300 uA/V2, Vt = 0.3 V, VDD = 2 V, and kn = 3kp. (a) Find VOH and VOL. (b) Evaluate the values of VOH and VOL and find the average power dissipated in the inverter, assuming it spends half the time in each of its two states.

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Consider a pseudo-NMOS inverter fabricated in 0.35-um CMOS technology for which assuming lambda1 = lambda2 = 0, Vtn = -Vtp = Vt, kn = 300 uA/V2, Vt = 0.3 V, VDD = 2 V, and kn = 3kp. (a) Find VOH and VOL. (b) Evaluate the values of VOH and VOL and find the average power dissipated in the inverter, assuming it spends half the time in each of its two states.

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