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Consider a pseudo-NMOS inverter fabricated in a 0.18-um CMOS technology for which unCox = 120 uA/V2, upCox = 40 uA/V2, Vtn = -Vtp = 0.5 V, and VDD = 2.5 V. If (W/L)n = 0.325um/0.18um and r = 4, a total capacitance at the inverter output of 21 fF.

Consider a pseudo-NMOS inverter fabricated in a 0.18-um CMOS technology for which unCox = 120 uA/V2, upCox = 40 uA/V2, Vtn = -Vtp = 0.5 V, and VDD = 2.5 V. If (W/L)n = 0.325um/0.18um and r = 4, a total capacitance at the inverter output of 21 fF.

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Consider a pseudo-NMOS inverter fabricated in a 0.18-um CMOS technology for which unCox = 120 uA/V2, upCox = 40 uA/V2, Vtn = -Vtp = 0.5 V, and VDD = 2.5 V. If (W/L)n = 0.325um/0.18um and r = 4, a total capacitance at the inverter output of 21 fF.

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