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Consider an ideal MOS capacitor fabricated on P-type silicon with a doping of Na = 5×1016 cm−3 with an oxide thickness of 2 nm and an N+poly-gate (heavily doped, such that Ef is at the valence band edge). (a) What is the flat-band voltage, Vfb, of this capacitor? (b) Calculate the maximum depletion region width, Wdmax (c) Find the threshold voltage, Vt of this device.

Consider an ideal MOS capacitor fabricated on P-type silicon with a doping of Na = 5×1016 cm−3 with an oxide thickness of 2 nm and an N+poly-gate (heavily doped, such that Ef is at the valence band edge). (a) What is the flat-band voltage, Vfb, of this capacitor? (b) Calculate the maximum depletion region width, Wdmax (c) Find the threshold voltage, Vt of this device.

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Consider an ideal MOS capacitor fabricated on P-type silicon with a doping of N a = 5 × 10 16 c m − 3 with an oxide thickness of 2 n m and an N + poly-gate (heavily doped, such that E f is at the valence band edge). (a) What is the flat-band voltage, V f b , of this capacitor? (b) Calculate the maximum depletion region width, W d max (c) Find the threshold voltage, V t of this device.

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