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Consider an n-channel enhancement-mode MOSFET with the following parameters: VTN = 0.4 V, W = 20 μm, L = 0.8 μm, μn = 650 cm2/V−s, tox = 200 Å, and ϵox = (3.9)(8.85×10−14) F/cm. Determine the current when the transistor is biased in the saturation region for (a) vGS = 0.8 V and (b) vGS = 1.6 V.

Consider an n-channel enhancement-mode MOSFET with the following parameters: VTN = 0.4 V, W = 20 μm, L = 0.8 μm, μn = 650 cm2/V−s, tox = 200 Å, and ϵox = (3.9)(8.85×10−14) F/cm. Determine the current when the transistor is biased in the saturation region for (a) vGS = 0.8 V and (b) vGS = 1.6 V.

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Consider an n-channel enhancement-mode MOSFET with the following parameters: V T N = 0.4 V , W = 20 μ m , L = 0.8 μ m , μ n = 650 c m 2 / V − s , t o x = 200 Å , and ϵ o x = ( 3.9 ) ( 8.85 × 10 − 14 ) F / c m . Determine the current when the transistor is biased in the saturation region for (a) v G S = 0.8 V and (b) v G S = 1.6 V .

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