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Consider an n-channel MOSFET with threshold voltage 1.3 V, electron mobility of 488 cm2/Vs, gate oxide thickness of 6 nm, gate oxide permittivity of 2.1

Consider an n-channel MOSFET with threshold voltage 1.3 V, electron mobility of 488 cm2/Vs, gate oxide thickness of 6 nm, gate oxide permittivity of 2.1

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Consider an n-channel MOSFET with threshold voltage 1.3 V, electron mobility of 488 cm2/Vs, gate oxide thickness of 6 nm, gate oxide permittivity of 2.1

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