Question

Notify Me Bookmark

Consider an n-channel MOSFET with tox = 9 nm, μn = 500 cm2/V⋅s, Vtn = 0.7 V, and W/L = 10. Find the drain current in the following cases: (a) vGS = 5 V and vDS = 1 V (b) vGS = 2 V and vDS = 1.3 V (c) vGS = 5 V and vDS = 0.2 V (d) vGS = vDS = 5 V PROBLEM 5.14, in Microelectronic Circuits (Sedra/Smith), 6th Edition.

Consider an n-channel MOSFET with tox = 9 nm, μn = 500 cm2/V⋅s, Vtn = 0.7 V, and W/L = 10. Find the drain current in the following cases: (a) vGS = 5 V and vDS = 1 V (b) vGS = 2 V and vDS = 1.3 V (c) vGS = 5 V and vDS = 0.2 V (d) vGS = vDS = 5 V PROBLEM 5.14, in Microelectronic Circuits (Sedra/Smith), 6th Edition.

Image text
Consider an n-channel MOSFET with tox = 9 nm , μ n = 500 cm 2 / V ⋅ s , Vtn = 0.7 V , and W / L = 10 . Find the drain current in the following cases: (a) v G S = 5 V and v D S = 1 V (b) v G S = 2 V and v D S = 1.3 V (c) v G S = 5 V and v D S = 0.2 V (d) v G S = v D S = 5 V
PROBLEM 5.14, in Microelectronic Circuits (Sedra/Smith), 6th Edition.

Detailed Answer

0 0

Please enter your email here. You will get email when this question is answered by our tutor.

Doubtrix Logo

Problem is not yet solved!

Click on Notify me to get email when question is answered.

Join Doubtrix with 7-days free trial

  • Icon Correct & Verified Answers
  • Icon No AI-Generated Answers
  • Icon Video Solution for Difficult Questions
  • Icon Work With Experts to Reach at Correct Answers
Notify me Login Sign Up

Similar/Related Questions

Consider an n-channel MOSFET with tox = 9 nm, μn = 500 cm2/V⋅s, Vtn = 0.7 V, and W/L = 10. Find the drain current in the following cases: (a) vGS = 5 V and vDS = 1 V (b) vGS = 2 V and vDS = 1.3 V (c) vGS = 5 V and vDS = 0.2 V (d) vGS = vDS = 5 V
Solution
0 0

An n-channel MOSFET with kn = 50×10−6 , W = 10 μm, L = 1 μm, and VT = 1 V, is biased with vGS = 3 V and vDS = 5 V. a. Compute the drain current iD b. Compute the transconductance gm c. Compute the output conductance go if V DS = 2 V d. Compute the output conductance go if VDS = 0 V An enhancement-type p - channel MOSFET with kp = 10×10−6 , W = 10 μm, L = 1 μm, and vT = −2 V, is biased with vG = 0 V and vS = 5 V. What is the highest voltage of vD that will keep the device in saturation?
Solution
0 0

An NMOS transistor, operating in the triode region with vDS = 1 V, is found to conduct 0.6 mA for vGS = 2 V and 1.6 mA for vGS = 4 V. a) What is the apparent value of threshold voltage V1? b) If kn’ = 0.5 mA/V2, what is the device W/L ratio? c) What current would expect to flow with vGS = 3 V and vDS = 0.15 V? d) If the device is operated at with vGS = 2.25 V, at what value of vDS will the drain end of the MOSFET channel just reach pinch off, and what is the corresponding drain current?
Solution
0 0