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Consider an n-type MOSFET, which consists of a 10 nm thick oxide (er = 3.9) and has a gate length of 1 micron, a gate width of 20 micron and a threshold voltage of 1.5 Volt. Calculate the resistance of the MOSFET in the linear region as measured between source and drain when applying a gate-source voltage of 3 Volt. What should the gate-source voltage be to double the resistance? The surface mobility of the electrons is 300 cm2/V-sec.

Consider an n-type MOSFET, which consists of a 10 nm thick oxide (er = 3.9) and has a gate length of 1 micron, a gate width of 20 micron and a threshold voltage of 1.5 Volt. Calculate the resistance of the MOSFET in the linear region as measured between source and drain when applying a gate-source voltage of 3 Volt. What should the gate-source voltage be to double the resistance? The surface mobility of the electrons is 300 cm2/V-sec.

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Consider an n-type MOSFET, which consists of a 10 nm thick oxide (er = 3.9) and has a gate length of 1 micron, a gate width of 20 micron and a threshold voltage of 1.5 Volt. Calculate the resistance of the MOSFET in the linear region as measured between source and drain when applying a gate-source voltage of 3 Volt. What should the gate-source voltage be to double the resistance? The surface mobility of the electrons is 300 cm2/V-sec.

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