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Consider an n-type MOSFET with an oxide thickness tox = 20 nm (Er = 3.9) and a gate length, L = 1 micron, a gate width, W = 10 micron and a threshold voltage, VT = 1 Volt. Calculate the capacitance per unit area of the oxide, COX, and from it the capacitance of the gate, CG. Calculate the drain current, ID, at a gate-source voltage, VGS = 3 Volt and a drain-source voltage, VDS = 0.05 Volt. The surface mobility of the electrons un = 300 cm2/V-sec. Use the linear model of the MOSFET.

Consider an n-type MOSFET with an oxide thickness tox = 20 nm (Er = 3.9) and a gate length, L = 1 micron, a gate width, W = 10 micron and a threshold voltage, VT = 1 Volt. Calculate the capacitance per unit area of the oxide, COX, and from it the capacitance of the gate, CG. Calculate the drain current, ID, at a gate-source voltage, VGS = 3 Volt and a drain-source voltage, VDS = 0.05 Volt. The surface mobility of the electrons un = 300 cm2/V-sec. Use the linear model of the MOSFET.

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Consider an n-type MOSFET with an oxide thickness tox = 20 nm (Er = 3.9) and a gate length, L = 1 micron, a gate width, W = 10 micron and a threshold voltage, VT = 1 Volt. Calculate the capacitance per unit area of the oxide, COX, and from it the capacitance of the gate, CG. Calculate the drain current, ID, at a gate-source voltage, VGS = 3 Volt and a drain-source voltage, VDS = 0.05 Volt. The surface mobility of the electrons un = 300 cm2/V-sec. Use the linear model of the MOSFET.

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