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Consider an NMOS transistor with L=0.18 um and W=2 um. The process technology is specified to have Cox = 8.6 fF/um^2, un = 450 cm^2/V.s, and Vtn = 0.5V. a. Find VGS and VDS that result in the MOSFET operating at the edge of saturation with ID = 100 uA. b. If VGS is kept constant, find ID when VDS is reduced to 0.06 V.

Consider an NMOS transistor with L=0.18 um and W=2 um. The process technology is specified to have Cox = 8.6 fF/um^2, un = 450 cm^2/V.s, and Vtn = 0.5V. a. Find VGS and VDS that result in the MOSFET operating at the edge of saturation with ID = 100 uA. b. If VGS is kept constant, find ID when VDS is reduced to 0.06 V.

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Consider an NMOS transistor with L=0.18 um and W=2 um. The process technology is specified to have Cox = 8.6 fF/um^2, un = 450 cm^2/V.s, and Vtn = 0.5V. a. Find VGS and VDS that result in the MOSFET operating at the edge of saturation with ID = 100 uA. b. If VGS is kept constant, find ID when VDS is reduced to 0.06 V.

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