Consider an NMOS whose G, S, D terminals are connected as shown in the

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Consider an NMOS whose G, S, D terminals are connected as shown in the figure below. Note that the voltage VGD is applied across the gate and drain and VGD = VG−VD. The threshold voltage of the MOSFET is Vth . First determine the MOSFET region of operation and then write the equation for IDS as a function of VDS and sketch the IDS−VDS curve, for: (a) VGD = 0 V; (b) VGD = Vth/2; (c) VGD = 2 Vth.

Consider an NMOS whose G, S, D terminals are connected as shown in the figure below. Note that the voltage VGD is applied across the gate and drain and VGD = VG−VD. The threshold voltage of the MOSFET is Vth . First determine the MOSFET region of operation and then write the equation for IDS as a function of VDS and sketch the IDS−VDS curve, for: (a) VGD = 0 V; (b) VGD = Vth/2; (c) VGD = 2 Vth.

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Consider an NMOS whose G, S, D terminals are connected as shown in the figure below. Note that the voltage

V_{G D}

is applied across the gate and drain and

V_{G D} = V_{G} - V_{D}

. The threshold voltage of the MOSFET is

V_{th}

. First determine the MOSFET region of operation and then write the equation for

I_{D S}

as a function of

V_{D S}

and sketch the

I_{D S} - V_{D S}

curve, for: (a)

V_{G D} = 0 V

; (b)

V_{G D} = V_{t t} / 2

; (c)

V_{G D} = 2 V_{th}

.

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