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Consider MOS transistors fabricated in a 65-nm process for which unCox = 470 uA/V2, upCox = 190 uA/V2, Vtn = -Vtp = 0.35 V, and VDD = 1 V. (a) Find Ron of an NMOS transistor with W/L= 1.5. (b) Find Ron of a PMOS transistor with W/L= 1.5. (c) If Ron of the PMOS device is to be equal to that of the NMOS device in (a), what must (W/L)p

Consider MOS transistors fabricated in a 65-nm process for which unCox = 470 uA/V2, upCox = 190 uA/V2, Vtn = -Vtp = 0.35 V, and VDD = 1 V. (a) Find Ron of an NMOS transistor with W/L= 1.5. (b) Find Ron of a PMOS transistor with W/L= 1.5. (c) If Ron of the PMOS device is to be equal to that of the NMOS device in (a), what must (W/L)p

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Consider MOS transistors fabricated in a 65-nm process for which unCox = 470 uA/V2, upCox = 190 uA/V2, Vtn = -Vtp = 0.35 V, and VDD = 1 V. (a) Find Ron of an NMOS transistor with W/L= 1.5. (b) Find Ron of a PMOS transistor with W/L= 1.5. (c) If Ron of the PMOS device is to be equal to that of the NMOS device in (a), what must (W/L)p

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