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Consider n-channel and p-channel silicon MOSFETs fabricated on the same wafer with 1.0 um channel lengths and 30 nm thick silicon dioxide. Carrier mobilities for electrons and holes are given as un = 580 cm2V-1s-1 and up = 230 cm2V-1s-1, respectively. a. Determine the process transconductance parameters for n-channel and p channel devices. [10 Pts] b. Determine the channel widths for n-MOS and p-MOS transistors such that the device transconductance parameters are both 0.3 mA/V2.

Consider n-channel and p-channel silicon MOSFETs fabricated on the same wafer with 1.0 um channel lengths and 30 nm thick silicon dioxide. Carrier mobilities for electrons and holes are given as un = 580 cm2V-1s-1 and up = 230 cm2V-1s-1, respectively. a. Determine the process transconductance parameters for n-channel and p channel devices. [10 Pts] b. Determine the channel widths for n-MOS and p-MOS transistors such that the device transconductance parameters are both 0.3 mA/V2.

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Consider n-channel and p-channel silicon MOSFETs fabricated on the same wafer with 1.0 um channel lengths and 30 nm thick silicon dioxide. Carrier mobilities for electrons and holes are given as un = 580 cm2V-1s-1 and up = 230 cm2V-1s-1, respectively. a. Determine the process transconductance parameters for n-channel and p channel devices. [10 Pts] b. Determine the channel widths for n-MOS and p-MOS transistors such that the device transconductance parameters are both 0.3 mA/V2.

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