Question

Notify Me Bookmark

Consider the 6 T SRAM cell. Assume a '1' is initially being held at Q and we are writing a '0' from BL to the cell. Let WM1 = WM2 = WM3 = WM4 = 0.5 μm. Find a constraint on the width of M6 such that '0' can be written into the cell. Ignore impact of BL¯ and M5 (that is, do not consider the help from M5 in causing a voltage change at Q¯). Assume the bit-line is driven by strong NMOS driver having a Wn = 5 μm. Ignore body-effect.

Consider the 6 T SRAM cell. Assume a '1' is initially being held at Q and we are writing a '0' from BL to the cell. Let WM1 = WM2 = WM3 = WM4 = 0.5 μm. Find a constraint on the width of M6 such that '0' can be written into the cell. Ignore impact of BL¯ and M5 (that is, do not consider the help from M5 in causing a voltage change at Q¯). Assume the bit-line is driven by strong NMOS driver having a Wn = 5 μm. Ignore body-effect.

Image text
Consider the 6T SRAM cell. Assume a ' 1 ' is initially being held at Q and we are writing a ' 0 ' from BL to the cell. Let W M 1 = W M 2 = W M 3 = W M 4 = 0.5 μ m . Find a constraint on the width of M 6 such that ' 0 ' can be written into the cell. Ignore impact of B L ¯ and M 5 (that is, do not consider the help from M5 in causing a voltage change at Q ¯ ). Assume the bit-line is driven by strong NMOS driver having a W n = 5 μ m . Ignore body-effect.

Detailed Answer

0 0

Please enter your email here. You will get email when this question is answered by our tutor.

Doubtrix Logo

Problem is not yet solved!

Click on Notify me to get email when question is answered.

Join Doubtrix with 7-days free trial

  • Icon Correct & Verified Answers
  • Icon No AI-Generated Answers
  • Icon Video Solution for Difficult Questions
  • Icon Work With Experts to Reach at Correct Answers
Notify me Login Sign Up

Similar/Related Questions

For all circuits, do not consider channel length modulation for calculating bias points. Unless otherwise specified, channel length modulation effect needs to be considered for small-signal analysis. All answers should be given to the second decimal place. Circuit and device parameters are: Vdd = 5 V;VTn = VTp = 1 V; μnCox = 50 μA/V2; μpCox = 25 μA/V2; λn = λp = 0.01 V−1; Lmin = 1 μm Figure 1 (for problems 1-3) Figure 2 (for problems 5-9) Figure 1: Transistor M1 has (W/L) = (160 μm/2 μm) and a bias current Iout = 2 mA. We desire M1 to be in saturation. You should assume λn = 0 for problems (1)-(3). Determine the ratio R1 /R2 required. 1 point Let VTn increase by 10% to 1.1 V. What is the new value of Iout in mA ? 1 point Let μnCox increase by 10% to 55 μA/V2. What is the new value of Iout in mA ? 1 point Figure 2: The circuit has Iref = 2 mA and Vp = 4 V. Transistors M1, M2 and M3 have (W/L) = (80 μm/1 μm). Determine the value of vx. (in volts) 1 point Determine the minimum allowable value of Vb (in volts) such that all devices are in saturation. 1 point Determine the maximum allowable value of Vb (in volts) such that all devices are in saturation. 1 point Determine Vb (in volts) such that vX = VY. 1 point determine the output resistance of this circuit ∂Vp/∂Iout in MΩ. 1 point Description for questions 9-10: An NMOS device with ID = 1 mA must operate in saturation with drain-source voltages as low as 0.5 V. The minimum required small-signal output impedance is 400 kQ. {Hint: You need to use the relations: rout = 1 /(λ⋅ID); λ⋅L = constant; and expression for VDS, sat = VGS−VT} Determine the length of the device in μm. 1 point Determine the width of the device in μm. 1 point

Solution
0 0

For all circuits, do not consider channel length modulation for calculating bias points. Unless otherwise specified, channel length modulation effect needs to be considered for small-signal analysis. All answers should be given to the second decimal place. Circuit and device parameters are: Vdd = 5 V; VTnn = VTp = 1 V; μnCox = 50 μA/V2; μpCox = 25 μA/V2; λn = λp = 0.01 V−1; Lmin = 1 μm Figure 1 (for problems 1-3) Figure 2 (for problems 5-9) Figure 1: Transistor M1 has (W/L) = (160 μm/2 μm) and a bias current Iout = 2 mA. We desire M1 to be in saturation. You should assume λn = 0 for problems (1)-(3). Determine the ratio R1 /R2 required. 1 point Let VTn increase by 10% to 1.1 V. What is the new value of Iout in mA ? 1 point Let μnCox increase by 10% to 55 μA/V2. What is the new value of Iout in mA ? 1 point Figure 2: The circuit has Iref = 2 mA and VP = 4 V. Transistors M1, M2 and M3 have (W/L) = (80 μm/1 μm). Determine the value of vx. (in volts) 1 point Determine the minimum allowable value of Vb (in volts) such that all devices are in saturation. 1 point Determine the maximum allowable value of Vb (in volts) such that all devices are in saturation. 1 point Determine Vb (in volts) such that VX = VY. 1 point determine the output resistance of this circuit ∂Vp/Iout in MQ. 1 point Description for questions 9-10: An NMOS device with ID = 1 mA must operate in saturation with drain-source voltages as low as 0.5 V. The minimum required small-signal output impedance is 400 kΩ. {Hint: You need to use the relations: rout = 1 /(λ⋅ID); λ⋅L = constant; and expression for VDS, sat = VGS−VT }Determine the length of the device in μm. 1 point Determine the width of the device in μm. 1 point

Solution
0 0

(i) Design a CMOS logic circuit to implement the function Y = AB + C¯. Find the minimum width for each transistor such that the delay is not worse than the reference inverter. Assume that for the basic inverter n = 2 and p = 4 and that technology used is L = 0.5 μm. ( 8 marks) (ii) Consider the circuit shown below. (a) Express Y as a function of A and B. (b) Redraw the circuit using CMOS Transmission gate switch. (c) Compare the performance of the Transmission Gate switch to the NMOS switch and PMOS switch. (6 marks) (iii) Mark the correct answer in the following. (6 marks)VIH is a) the maximum input voltage level to be considered as High. b) the maximum input voltage level to be considered as Low. c) the minimum input voltage level to be considered as High. d) the minimum input voltage level to be considered as Low. VIL is a) the maximum input voltage level to be considered as High. b) the minimum input voltage level to be considered as Low. c) the minimum input voltage level to be considered as High. d) the maximum input voltage level to be considered as Low. The noise margin in the Low state for a logical circuit with VIH = 2.2 V, VIL = 0.4 V, VOH = 4.0 V and VOL = 0.2 V is a) 0.2 V. b) 2.0 V c) 1.8 V. d) 3.6 V.

Solution
0 0