Consider the C-V characteristic below for a silicon MOS capacitor. (a) Is the semiconductor p-type or n-type? (2 pts) (b) Is this a low frequency or high frequency measurement? (2 pts) (c) What is the threshold voltage of this device? (2 pts) (d) What would happen to the capacitance in region 1 if the oxide thickness x0 is increased? Increase, decrease, or stay the same? (2 pts)