Consider the circuit in figure. The bias current in the circuit is 0.3 mA and the transistors are biased such that, |Vovn| = 0.5∗|Vovp| = 150 mV. The technology parameters are given by VDD = 1.8 V, |VAp| = 2|VAn| = 12 V. Fill in the table with proper units. Neglect channel length modulation for biasing calculations. (2+4+4+2) Effective small-signal transconductance of the amplifier Small-signal input resistance of the amplifier Small-signal output resistance of the amplifier Small-signal open circuit voltage gain
![Consider the following amplifier circuit. Both MOSFET’s have the following specifications: (W/L) = (6µm/0.18µm), processing parameters kp = µpCox = 70µA/V2 , kn = µnCox = 270µA/V2 , |Vt| = 0.45 V, V Ω A = 12.5 V/µm = VA, and Q1 is biased so that Vov = 200mV, gate of Q2 is at DC voltage VG = 0.96 V and VDD = 1.8 V. a. What is the configuration of amplifier, i.e. CE or CB or CD or CS or CG or CC or CD or CS with active load or CG with active load or CE with active load or CB with active load or CD with active load or CC with active load or CE using 0.18µm technology? Or none of the above the correct answer is b. Find the small-signal output resistance Rout and input resistance Rin looking into gate Q1 c. Calculate small-signal voltage gain of the amplifier Av = [vo/vi ] d. What is the voltage swing at the output, i.e. vomax and vomin ? e. Calculate the power consumed by the amplifier.](https://www.doubtrix.com/uploads/editor/9038008426JohCcjsvNB.jpg)
