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Consider the circuit of Fig. 5.24(a). In Example 5.5 it was found that when Vt = 1 V and k’n(W/L) = 1 mA/V2 , the drain current is 0.5 mA and the drain voltage is +7 V. If the transistor is replaced with another having Vt = 1.5 V with k’n(W/L) = 1.5 mA/V2 , find the new values of ID and VD. Comment on how tolerant (or intolerant) the circuit is to changes in device parameters.

Consider the circuit of Fig. 5.24(a). In Example 5.5 it was found that when Vt = 1 V and k’n(W/L) = 1 mA/V2 , the drain current is 0.5 mA and the drain voltage is +7 V. If the transistor is replaced with another having Vt = 1.5 V with k’n(W/L) = 1.5 mA/V2 , find the new values of ID and VD. Comment on how tolerant (or intolerant) the circuit is to changes in device parameters.

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Consider the circuit of Fig. 5.24(a). In Example 5.5 it was found that when Vt = 1 V and k’n(W/L) = 1 mA/V2 , the drain current is 0.5 mA and the drain voltage is +7 V. If the transistor is replaced with another having Vt = 1.5 V with k’n(W/L) = 1.5 mA/V2 , find the new values of ID and VD. Comment on how tolerant (or intolerant) the circuit is to changes in device parameters.

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5.51 Consider the circuit of Fig. 5.24(a). In Example 5.6 it was found that when Vt = 1 V and kn′(W/L) = 1 mA/V2, the drain current is 0.5 mA and the drain voltage is +7 V. If the transistor is replaced with another having Vt = 1.5 V with kn′(W/L) = 1.5 mA/V2, find the new values of ID and VD. Comment on how tolerant (or intolerant) the circuit is to changes in device parameters. ^ Hide Answer 0.454 mA, +7.28 V; circuit is quite tolerant to variations in device parameters (a) 5.51 Consider the circuit of Fig. 5.24(a). In Example 5.6 it was found that when Vt = 1 V and kn′(W/L) = 1 mA/V2, the drain current is 0.5 mA and the drain voltage is +7 V. If the transistor is replaced with another having Vt = 1.5 V with kn′(W/L) = 1.5 mA/V2, find the new values of ID and VD. Comment on how tolerant (or intolerant) the circuit is to changes in device parameters. ^ Hide Answer 0.454 mA, +7.28 V; circuit is quite tolerant to variations in device parameters (a)

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Figure P7.33 shows a discrete-circuit amplifier. The input signal vsig is coupled to the gate through a very large capacitor (shown as infinite). The transistor source is connected to ground at signal frequencies via a very large capacitor (shown as infinite). The output voltage signal that develops at the drain is coupled to a load resistance via a very large capacitor (shown as infinite). All capacitors behave as short circuits for signals and as open circuits for dc. (a) If the transistor has Vt = 1 V, and kn = 4 mA/V2 , verify that the bias circuit establishes VGS = 1.5 V, ID = 0.5 mA, and VD = +7.0 V. That is, assume these values, and verify that they are consistent with the values of the circuit components and the device parameters. (b) Find gm and ro if VA = 100 V. (c) Draw a complete small-signal equivalent circuit for the amplifier, assuming all capacitors behave as short circuits at signal frequencies. (d) Find Rin, vgs/vsig, vo/vgs, and vo/vsig.

Figure P7.33 shows a discrete-circuit amplifier. The input signal vsig is coupled to the gate through a very large capacitor (shown as infinite). The transistor source is connected to ground at signal frequencies via a very large capacitor (shown as infinite). The output voltage signal that develops at the drain is coupled to a load resistance via a very large capacitor (shown as infinite). All capacitors behave as short circuits for signals and as open circuits for dc. (a) If the transistor has Vt = 1 V, and kn = 4 mA/V2 , verify that the bias circuit establishes VGS = 1.5 V, ID = 0.5 mA, and VD = +7.0 V. That is, assume these values, and verify that they are consistent with the values of the circuit components and the device parameters. (b) Find gm and ro if VA = 100 V. (c) Draw a complete small-signal equivalent circuit for the amplifier, assuming all capacitors behave as short circuits at signal frequencies. (d) Find Rin, vgs/vsig, vo/vgs, and vo/vsig.
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Consider the circuit of Fig. 5.56 for the case VDD = VSS = 10 V, I = 0.5 mA, RG = 4.7 MΩ, RD = 15 kΩ, Vt = 1.5 V, and kn′(W/L) = 1 mA/V2. Find VOV, VGS, VG, VS, and VD. Also, calculate the values of gm and ro, assuming that VA = 75 V. What is the maximum possible signal swing at the drain for which the MOSFET remains in saturation?

Consider the circuit of Fig. 5.56 for the case VDD = VSS = 10 V, I = 0.5 mA, RG = 4.7 MΩ, RD = 15 kΩ, Vt = 1.5 V, and kn′(W/L) = 1 mA/V2. Find VOV, VGS, VG, VS, and VD. Also, calculate the values of gm and ro, assuming that VA = 75 V. What is the maximum possible signal swing at the drain for which the MOSFET remains in saturation?
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