Consider the circuit shown in Figure 2 below. Here, VDD = 3.3 V, ideal current source Ibias = 100 uA, load resistor RL = 1 kohm, and PMOS devices M1 and M2 have the following properties: - W1 = W2 = 10 um - L1 = L2 = 0.5 um - upCox = 50 uA/V2 - VT0 = -800 mV - channel length modulation coefficient lambda_p = 0.02 V^-1 - body effect coefficient gamma_p = 0.5 V^1/2 Determine the following: a) the numerical value of node voltage VL b) the numerical value of load current IL.

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Consider the circuit shown in Figure 2 below. Here, VDD = 3.3 V, ideal current source Ibias = 100 uA, load resistor RL = 1 kohm, and PMOS devices M1 and M2 have the following properties: - W1 = W2 = 10 um - L1 = L2 = 0.5 um - upCox = 50 uA/V2 - VT0 = -800 mV - channel length modulation coefficient lambda_p = 0.02 V^-1 - body effect coefficient gamma_p = 0.5 V^1/2 Determine the following: a) the numerical value of node voltage VL b) the numerical value of load current IL.

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