Consider the circuitinthe figure below, which uses IRF260MPbF MOSFET for switching. Calculate the switching loss(inmW) associated with the MOSFET for the given gate pulse. Consult the datasheet of IRF260MPbF and use appropriate parameters wherever necessary. fs=10kHz. and Calculate the total conduction losses(inmW) for the MOSFET. Drain-to-Source On-Resistance, (RDS(on) = 0.04 Ω) Total Gate Charge, (Qg =234nC) Drain Current, (ID =50A) Drain-to-Source Breakdown Voltage, (VDS =200V)
Consider the circuit in the figure below, which uses IRF260MPbF MOSFET for switching. Calculate the switching loss (in mW) associated with the MOSFET for the given gate pulse. Consult the datasheet of IRF260MPbF and use appropriate parameters wherever necessary. f s =10kHz. and Calculate the total conduction losses (in mW) for the MOSFET
Drain-to-Source On-Resistance, (RDS(on) = 0.04 â¦) Total Gate Charge, (Qg = 234 nC) Drain Current, (ID = 50 A) Drain-to-Source Breakdown Voltage, (VDS = 200 V)
The output capacitance of the MOSFET is 603pF