Question

Notify Me Bookmark

Consider the CMOS common-source amplifier in Fig. 7.4(a) for the case VDD = 3 V, Vtn = |Vtp| = 0.6 V, μnCox = 200 μA/V2, and μpCox = 65 μA/V2. For all transistors, L = 0.4 μm and W = 4 μm. Also, VAn = 20 V, |VAp| = 10 V, and IREF = 100 μA. Find the small-signal voltage gain. Also, find the coordinates of the extremities of the amplifier region of the transfer characteristic-that is, points A and B. (a)

Consider the CMOS common-source amplifier in Fig. 7.4(a) for the case VDD = 3 V, Vtn = |Vtp| = 0.6 V, μnCox = 200 μA/V2, and μpCox = 65 μA/V2. For all transistors, L = 0.4 μm and W = 4 μm. Also, VAn = 20 V, |VAp| = 10 V, and IREF = 100 μA. Find the small-signal voltage gain. Also, find the coordinates of the extremities of the amplifier region of the transfer characteristic-that is, points A and B. (a)

Image text
Consider the CMOS common-source amplifier in Fig. 7.4(a) for the case V D D = 3 V , V t n = | V t p | = 0.6 V , μ n C o x = 200 μ A / V 2 , and μ p C o x = 65 μ A / V 2 . For all transistors, L = 0.4 μ m and W = 4 μ m . Also, V A n = 20 V , | V A p | = 10 V , and I R E F = 100 μ A . Find the small-signal voltage gain. Also, find the coordinates of the extremities of the amplifier region of the transfer characteristic-that is, points A and B. (a)

Detailed Answer

0 0

Please enter your email here. You will get email when this question is answered by our tutor.

Doubtrix Logo

Problem is not yet solved!

Click on Notify me to get email when question is answered.

Join Doubtrix with 7-days free trial

  • Icon Correct & Verified Answers
  • Icon No AI-Generated Answers
  • Icon Video Solution for Difficult Questions
  • Icon Work With Experts to Reach at Correct Answers
Notify me Login Sign Up

Similar/Related Questions

Consider the CMOS amplifier in the common-source configuration from the figure, for the case: VDD = 5 V, Vtn = |Vtp| = 1 V, μnCox = μpCox = 20 μA/V2, W = 100 μm, L = 10 μm, for both types of NMOS, PMOS transistors, and IREF = 100 μA. (i) Assuming all transistors operate in saturation, working with first-order equations, establish the range of output voltage corresponding to the amplifying region, that is, the values VOA′ and VOB′. (ii) Considering |VA| = 100 V for both types of transistors, obtain the small-signal gain vo/vi in the mid-frequency range.
Solution
3 0

Figure 3 shows an amplifier with a current mirror as an active load. The MOSFETs have the following parameters: Vtn = −Vtp = 0.6 V, kn′ = 200 μA/V2, kp′ = 65 μA/V2, VA(NMOS) = 20 V, VA(PMOS) = 10 V, VT = 26 mV, R1 = 7 kΩ, R2 = 10 kΩ, L = 0.4 μm and W = 4 μm. The base-emitter forward voltage, VBE, of transistor Q4 is 0.7 V. The forward voltage drop for both D1 and D2 is 0.7 V. The supply voltage, VDD = 3 V. Assume the base current of Q4 is negligible compared to the emitter and collector currents of Q4, with all the transistors biased in the active region. (a) Identify the transistors forming the current mirror. (b) Calculate the value of IREF . (c) Calculate the output resistances of transistors Q1 and Q2.
Solution
0 0

Figure 3 Figure 3 shows an amplifier with a current mirror as an active load. The MOSFETs have the following parameters: Vtn = −Vt = 0.6 V, kn′ = 200 μA/V2, kp′ = 65 μA/V2, VA(MMOS) = 20 V, VA(PMOS) = −10 V, VT = 26 mV, R1 = 7 kΩ, R2 = 10 kΩ, L = 0.4 μm and W = 4 μm. The base-emitter forward voltage, VBE, of transistor Q4 is 0.7 V. The forward voltage drop for both D1 and D2 is 0.7 V. The supply voltage, VDO = 3 V. Assume the base current of Q4 is negligible compared to the emitter and collector currents of Q4, with all the transistors biased in the active region. a. ) Given that ID = k′(WL)(VGS − Vt)2, calculate the gate to source voltage of Q1. b. ) Calculate the small-signal voltage gain, vout/vin. .

Solution
0 0