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Consider the current mirror depicted in Fig. P3.6 where Iin = 100 µA, R = 2 kΩ, and each transistor has W/L = 10 µm/0.4 µm. Given the 0.35-μm CMOS device parameters in Table 1.5, what drain voltage at Q2 will ensure that Iin is precisely equal to Iout?

Consider the current mirror depicted in Fig. P3.6 where Iin = 100 µA, R = 2 kΩ, and each transistor has W/L = 10 µm/0.4 µm. Given the 0.35-μm CMOS device parameters in Table 1.5, what drain voltage at Q2 will ensure that Iin is precisely equal to Iout?

Consider the current mirror depicted in Fig. P3.6 where Iin = 100 µA, R = 2 kΩ, and each transistor has W/L = 10 µm/0.4 µm. Given the 0.35-μm CMOS device parameters in Table 1.5, what drain voltage at Q2 will ensure that Iin is precisely equal to Iout?

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Consider the current mirror depicted in Fig. P3.6 where Iin = 100 µA, R = 2 kΩ, and each transistor has W/L = 10 µm/0.4 µm. Given the 0.35-μm CMOS device parameters in Table 1.5, what drain voltage at Q2 will ensure that Iin is precisely equal to Iout?

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