Consider the following 2 T DRAM design. All NMOS transistors are minim

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Consider the following 2 T DRAM design. All NMOS transistors are minimum sized ones with W/L ratio of 2:1. The drain diffusion capacitance and gate capacitance of the two transistors are Cd = 15 fF and Cg = 25 fF, respectively. Given k′ = μnCox = 100 μA/V2, Vt, n = 0.3 V, CRBL = CWBL = 400 fF, VDD = 1.5 V, γ = 0.15 V, 2φF = −0.6 V and when accessed WL = VDD and RL¯ = 0 V.

Consider the following 2 T DRAM design. All NMOS transistors are minimum sized ones with W/L ratio of 2:1. The drain diffusion capacitance and gate capacitance of the two transistors are Cd = 15 fF and Cg = 25 fF, respectively. Given k′ = μnCox = 100 μA/V2, Vt, n = 0.3 V, CRBL = CWBL = 400 fF, VDD = 1.5 V, γ = 0.15 V, 2φF = −0.6 V and when accessed WL = VDD and RL¯ = 0 V.

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Consider the following 2T DRAM design.

All NMOS transistors are minimum sized ones with W/L ratio of 2:1. The drain diffusion capacitance and gate capacitance of the two transistors are

C_{d} = 15 f F

and

C_{g} = 25 f F

, respectively. Given

k^{'} = μ_{n} C_{o x} = \frac{100 μ A}{V^{2}}, V_{t, n} = 0.3 V, C_{R B L} = C_{W B L} = 400 f F

,

V_{D D} = 1.5 V, γ = 0.15 \sqrt{V}, 2 φ_{F} = - 0.6 V

and when accessed

W L = V_{D D}

and

\bar{R L} =

0 V

.

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