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Consider the MOS capacitor with the energy band diagram shown below. The oxide thickness is 4 nm. The voltage applied to the oxide is 1 V. The N+poly-Si gate doping is Npoly = 7×1019 cm−3. The P−Si substrate Na = 2×1017 cm−3. (a) Calculate the poly gate depletion layer thickness Wdpoly (b) Calculate the depletion induced potential in the poly depletion region ϕpoly (c) Calculate the flat band voltage Vfb (d Calculate the surface potential at threshold ϕst (e) Calculate the gate voltage Vg at the threshold

Consider the MOS capacitor with the energy band diagram shown below. The oxide thickness is 4 nm. The voltage applied to the oxide is 1 V. The N+poly-Si gate doping is Npoly = 7×1019 cm−3. The P−Si substrate Na = 2×1017 cm−3. (a) Calculate the poly gate depletion layer thickness Wdpoly (b) Calculate the depletion induced potential in the poly depletion region ϕpoly (c) Calculate the flat band voltage Vfb (d Calculate the surface potential at threshold ϕst (e) Calculate the gate voltage Vg at the threshold

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  1. Consider the MOS capacitor with the energy band diagram shown below. The oxide thickness is 4 n m . The voltage applied to the oxide is 1 V . The N + poly-Si gate doping is N poly = 7 × 10 19 c m − 3 . The P − S i substrate N a = 2 × 10 17 c m − 3 . (a) Calculate the poly gate depletion layer thickness W dpoly (b) Calculate the depletion induced potential in the poly depletion region ϕ poly (c) Calculate the flat band voltage V f b (d Calculate the surface potential at threshold ϕ s t (e) Calculate the gate voltage V g at the threshold

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