Question

Notify Me Bookmark

Consider the NMOS inverter with depletion load driven by three NMOS transmission gates in series. Assume threshold voltages of the n-channel transmission gate transistors and the driver transistor are VTN = 0.8 V, and the threshold voltage of the load transistor is VTNL = −1.5 V. Also, assume that kmD = 50 μA/V2, knL = 10 μA/V2 and the length of the channels for Load and Driver is 0.1 μm. Design WDWL such that vO = 0.1 V when vI = VDD, A = B = VDD, and C = VDD−2VTN

Consider the NMOS inverter with depletion load driven by three NMOS transmission gates in series. Assume threshold voltages of the n-channel transmission gate transistors and the driver transistor are VTN = 0.8 V, and the threshold voltage of the load transistor is VTNL = −1.5 V. Also, assume that kmD = 50 μA/V2, knL = 10 μA/V2 and the length of the channels for Load and Driver is 0.1 μm. Design WDWL such that vO = 0.1 V when vI = VDD, A = B = VDD, and C = VDD−2VTN

Image text
Consider the NMOS inverter with depletion load driven by three NMOS transmission gates in series. Assume threshold voltages of the n-channel transmission gate transistors and the driver transistor are V T N = 0.8 V , and the threshold voltage of the load transistor is V T N L = − 1.5 V . Also, assume that k m D = 50 μ A / V 2 , k n L = 10 μ A / V 2 and the length of the channels for Load and Driver is 0.1 μ m . Design W D W L such that v O = 0.1 V when v I = V D D , A = B = V D D , and C = V D D − 2 V T N

Detailed Answer

0 0

Please enter your email here. You will get email when this question is answered by our tutor.

Doubtrix Logo

Problem is not yet solved!

Click on Notify me to get email when question is answered.

Join Doubtrix with 7-days free trial

  • Icon Correct & Verified Answers
  • Icon No AI-Generated Answers
  • Icon Video Solution for Difficult Questions
  • Icon Work With Experts to Reach at Correct Answers
Notify me Login Sign Up

Similar/Related Questions

Consider the NMOS inverter with depletion load in Figure 16.7(a). Let VDD = 1.8 V, and assume VTND = 0.3 V and VTNL = -0.6 V. (a) Design the circuit such that the power dissipation is 80μW and the output voltage is vO = 0.06 V when vI is a logic 1. (b) Using the results of part (a), determine the transition points for the driver and load transistors. (c) If (W/L)D found in part (a) is doubled, what is the maximum power dissipation in the inverter and what is vO when vI is a logic 1? The NMOS inverter with depletion load is shown in Figure 16.7(a). The bias is VDD = 2.5 V. The transistor parameters are VTND = 0.5 V and VTNL = -1 V. The width-to-length ratio of the load device is W/L = 1. (a) Design the driver transistor such that vO = 0.05 V when the input is a logic 1. (b) What is the power dissipated in the circuit when vI = 2.5 V?

Consider the NMOS inverter with depletion load in Figure 16.7(a). Let VDD = 1.8 V, and assume VTND = 0.3 V and VTNL = -0.6 V. (a) Design the circuit such that the power dissipation is 80μW and the output voltage is vO = 0.06 V when vI is a logic 1. (b) Using the results of part (a), determine the transition points for the driver and load transistors. (c) If (W/L)D found in part (a) is doubled, what is the maximum power dissipation in the inverter and what is vO when vI is a logic 1? The NMOS inverter with depletion load is shown in Figure 16.7(a). The bias is VDD = 2.5 V. The transistor parameters are VTND = 0.5 V and VTNL = -1 V. The width-to-length ratio of the load device is W/L = 1. (a) Design the driver transistor such that vO = 0.05 V when the input is a logic 1. (b) What is the power dissipated in the circuit when vI = 2.5 V?
Solution
0 0

Problem 3: Consider the NMOS inverter with enhancement load driven by an NMOS transmission gate in the figure below. The threshold voltage of each n-channel transistor is VTN = 0.5 V. Neglect the body effect. Design the KD/KL of the inverter such that vo = 0.1 V when vI = 2.8 V and ϕ = 3.3 V.

Solution
0 0

For the saturated load inverter shown in Figure 16.9(a), assume transistor parameters of VTNDO = VTNLO = 0.5 V, KD = 200 μA/V2, KL = 20 μA/V2, γ = 0.25 V1/2, and φfp = 0.35 V. Determine vO for vI = 0.12 V for the case when (a) the body effect is neglected and (b) the body effect is taken into account. Consider the NMOS inverter with depletion load in Figure 16.9(b). The transistor parameters are VTNDO = 0.4 V, VTNLO = -0.6 V, K D = 100 μA/V2, KL = 20 μA/V2, γ = 0.25 V1/2, and φfp = 0.35 V. Determine vI when vO = 1.25 V for the case when (a) the body effect is neglected and (b) the body effect is taken into account.

For the saturated load inverter shown in Figure 16.9(a), assume transistor parameters of VTNDO = VTNLO = 0.5 V, KD = 200 μA/V2, KL = 20 μA/V2, γ = 0.25 V1/2, and φfp = 0.35 V. Determine vO for vI = 0.12 V for the case when (a) the body effect is neglected and (b) the body effect is taken into account. Consider the NMOS inverter with depletion load in Figure 16.9(b). The transistor parameters are VTNDO = 0.4 V, VTNLO = -0.6 V, K D = 100 μA/V2, KL = 20 μA/V2, γ = 0.25 V1/2, and φfp = 0.35 V. Determine vI when vO = 1.25 V for the case when (a) the body effect is neglected and (b) the body effect is taken into account.
Solution
0 0