Considering the following circuit, let Vtn = 0.5 V and unCox = 200 uA/V2 and W/L= 20.2. Neglect the channel-length modulation effect (i.e., assume lambda = 0 and the transistor operates in saturation region). R1= 50kohm and R2=110kohm, and Vs= 0.3V.

Considering the following circuit, let Vtn = 0.5 V and unCox = 200 uA/V2 and W/L= 20.2. Neglect the channel-length modulation effect (i.e., assume lambda = 0 and the transistor operates in saturation region). R1= 50kohm and R2=110kohm, and Vs= 0.3V.

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Considering the following circuit, let Vtn = 0.5 V and unCox = 200 uA/V2 and W/L= 20.2. Neglect the channel-length modulation effect (i.e., assume lambda = 0 and the transistor operates in saturation region). R1= 50kohm and R2=110kohm, and Vs= 0.3V.

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