Question

Notify Me Bookmark

D 8.1 Using two matched MOS transistors with W/L = 10, kn' = 400 uA/V

D 8.1 Using two matched MOS transistors with W/L = 10, kn' = 400 uA/V

D 8.1 Using two matched MOS transistors with W/L = 10, kn' = 400 uA/V

Image text
D 8.1 Using two matched MOS transistors with W/L = 10, kn' = 400 uA/V

Detailed Answer

1 0

Please enter your email here. You will get email when this question is answered by our tutor.

Answer
Doubtrix Logo

This Problem has been solved!

You'll get a detailed, step-by-step and expert verified solution.

Join Doubtrix with 7-days free trial

  • Icon Correct & Verified Answers
  • Icon No AI-Generated Answers
  • Icon Video Solution for Difficult Questions
  • Icon Work With Experts to Reach at Correct Answers
Login Sign Up
  • Student Reviews:
  • (1)

Similar/Related Questions

Consider the following 2T DRAM design. All NMOS transistors are minimum sized ones with W/L ratio of 2:1. The drain diffusion capacitance and gate capacitance of the two transistors are Cd = 15 fF and Cg = 25 fF, respectively. Given k′ = μnCox = 100 μA V2, Vt,n = 0.3 V, CRBL = CWBL = 400 fF, VDD = 1.5 V, γ = 0.15 V, 2φF = −0.6 V and when accessed WL = VDD and RL¯ = 0 V. a) What is the effective store-node capacitance value, Cs? Hint: There is no explicit capacitance present at the storage node. b) Consider writing a '1' to this cell, what is the maximum voltage that can be observed at this storage node? Hint: To write a '1', WBL is driven high (its voltage goes to VDD). c) During a subsequent read operation, what should be the minimum pulse width of RLBAR for a voltage drop of VDD − 2Vtn2 on RBL? Hint: During the read, RBL is pre-charged to VDD before the cell is accessed.

Consider the following 2T DRAM design. All NMOS transistors are minimum sized ones with W/L ratio of 2:1. The drain diffusion capacitance and gate capacitance of the two transistors are Cd = 15 fF and Cg = 25 fF, respectively. Given k′ = μnCox = 100 μA V2, Vt,n = 0.3 V, CRBL = CWBL = 400 fF, VDD = 1.5 V, γ = 0.15 V, 2φF = −0.6 V and when accessed WL = VDD and RL¯ = 0 V. a) What is the effective store-node capacitance value, Cs? Hint: There is no explicit capacitance present at the storage node. b) Consider writing a '1' to this cell, what is the maximum voltage that can be observed at this storage node? Hint: To write a '1', WBL is driven high (its voltage goes to VDD). c) During a subsequent read operation, what should be the minimum pulse width of RLBAR for a voltage drop of VDD − 2Vtn2 on RBL? Hint: During the read, RBL is pre-charged to VDD before the cell is accessed.
Solution
0 0

Consider the following 2 T DRAM design. All NMOS transistors are minimum sized ones with W/L ratio of 2:1. The drain diffusion capacitance and gate capacitance of the two transistors are Cd = 15 fF and Cg = 25 fF, respectively. Given k′ = μnCox = 100 μA/V2, Vt, n = 0.3 V, CRBL = CWBL = 400 fF, VDD = 1.5 V, γ = 0.15 V, 2φF = −0.6 V and when accessed WL = VDD and RL¯ = 0 V.

Solution
0 0

A CS amplifier utilizes a MOSFET with unCox = 400 uA/V^2 and W/L = 10. It is biased at ID = 320 uA and uses RD = 10 kohm. Find Rin, Avo, and Ro. Also, if a load resistance of 10 kohm is connected to the output, what overall voltage gain Gv is realized? Now, if a 0.2-V peak sine-wave signal is required at the output, what must the peak amplitude of vsig be?
Solution
0 0