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*D10.45 The MOSFET current-source circuit in Figure P10.44 is biased at V+ = 2.0 V. The transistor parameters are VTN = 0.5 V, kn′ = 80 μA/V2, and λ = 0.015 V −1. (a) Design the circuit such that IREF = 50 μA and the nominal bias current is IO = 100 μA. (b) Find the output resistance Ro. (c) Determine the percentage change in IO for a change in drain-to-source voltage of ΔVDS2 = 1 V. Figure P10.44

*D10.45 The MOSFET current-source circuit in Figure P10.44 is biased at V+ = 2.0 V. The transistor parameters are VTN = 0.5 V, kn′ = 80 μA/V2, and λ = 0.015 V −1. (a) Design the circuit such that IREF = 50 μA and the nominal bias current is IO = 100 μA. (b) Find the output resistance Ro. (c) Determine the percentage change in IO for a change in drain-to-source voltage of ΔVDS2 = 1 V. Figure P10.44

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*D10.45 The MOSFET current-source circuit in Figure P10.44 is biased at V + = 2.0 V . The transistor parameters are V T N = 0.5 V , k n ′ = 80 μ A / V 2 , and λ = 0.015 V − 1 . (a) Design the circuit such that I R E F = 50 μ A and the nominal bias current is I O = 100 μ A . (b) Find the output resistance R o . (c) Determine the percentage change in I O for a change in drain-to-source voltage of Δ V D S 2 = 1 V . Figure P10.44

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Consider the CMOS common source amplifier circuit in Fig. 4. The transistor parameters are given as VTN = 0.5 V, VTP = −0.5 V, kn′ = 80 μA/V2, kp′ = 40 μA/V2, and λn = λp = 0.015 V −1. Assume that IBias = 0.1 mA and M2, M3 are identical. (a) Determine the small-signal parameters (gm and ro) of each transistor. (Express the transconductance gm in terms of the width-to-length ratio (W/L) without any values). (b) Draw the small-signal equivalent circuit and derive the small-signal voltage gain equation. (c) Find the width-to-length ratio of M1 such that the small-signal voltage gain is Av = −250. (d) Derive and calculate the output resistance Ro. Figure 4. CMOS common source amplifier circuit for the Question 4
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(b) For a MOSFET current source shown in Figure 3, the bias voltages are V+ = 1.5 V and V− = −1.5 V. Transistors are available with the parameters: kn' = 200 μA/V2, VTN = 0.5 V, and λ = 0. Figure 3 (i) Design the circuit such that IREF = 100 μA, IO = 250 μA, and VDS2(sat) = 1 V. [10 Marks] (ii) Calculate the change in output current, dIo and hence the output current Io when VDS2 = 3 V. Let λ = 0.01 V−1.

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For a MOSFET current source circuit in Figure 1 the transistor parameters are VTN = 0.5 V, λ = 0, and k’n = 80 µA/V2 . Design the circuit such that VDS2(sat) = 0.3 V, IREF = 50 µA, and the load current is IO = 100 µA. Show clearly all calculations as marks are given according to this.

For a MOSFET current source circuit in Figure 1 the transistor parameters are VTN = 0.5 V, λ = 0, and k’n = 80 µA/V2 . Design the circuit such that VDS2(sat) = 0.3 V, IREF = 50 µA, and the load current is IO = 100 µA. Show clearly all calculations as marks are given according to this.
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