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Define the region of operation (i.e., cut-off, linear, channel pinch-off a.k.a long-channel saturation or velocity saturation). Assume Vdd = 3.3 V and Vtn = |Vtp| = 0.4V and Vdsatn = |Vdsatp| = 1.1 V and obtain the drain current Ids. Justify your answer with proper analysis. (Prediction does not give you credit). Use the following transistor data - NMOS: kn’ = 115 μA /V2 , λ = 0.06 V-1 , PMOS: kp’ = -30μA V2 , λ = -0.1 V -1 . Assume W/L = 1 and VSB = 0.

Define the region of operation (i.e., cut-off, linear, channel pinch-off a.k.a long-channel saturation or velocity saturation). Assume Vdd = 3.3 V and Vtn = |Vtp| = 0.4V and Vdsatn = |Vdsatp| = 1.1 V and obtain the drain current Ids. Justify your answer with proper analysis. (Prediction does not give you credit). Use the following transistor data - NMOS: kn’ = 115 μA /V2 , λ = 0.06 V-1 , PMOS: kp’ = -30μA V2 , λ = -0.1 V -1 . Assume W/L = 1 and VSB = 0.

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Define the region of operation (i.e., cut-off, linear, channel pinch-off a.k.a long-channel saturation or velocity saturation). Assume Vdd = 3.3 V and Vtn = |Vtp| = 0.4V and Vdsatn = |Vdsatp| = 1.1 V and obtain the drain current Ids. Justify your answer with proper analysis. (Prediction does not give you credit). Use the following transistor data - NMOS: kn’ = 115 μA /V2 , λ = 0.06 V-1 , PMOS: kp’ = -30μA V2 , λ = -0.1 V -1 . Assume W/L = 1 and VSB = 0.

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Figure 0.3 shows NMOS and PMOS devices with drains, source, and gate ports annotated. Determine the mode of operation (saturation, linear, or cutoff) and drain current ID for each of the biasing configurations given below. Verify with SPICE. Use the following transistor data: NMOS: k’n = 115 µA/V2 , VT0 = 0.43 V, λ = 0.06 V–1, PMOS: k’p = 30 µA/V2 , VT0 = –0.4 V, λ = -0.1 V–1. Assume (W/L) = 1. a. NMOS: VGS = 2.5 V, VDS = 2.5 V. PMOS: VGS = –0.5 V, VDS = –1.25 V. b. NMOS: VGS = 3.3 V, VDS = 2.2 V. PMOS: VGS = –2.5 V, VDS = –1.8 V. c. NMOS: VGS = 0.6 V, VDS = 0.1 V. PMOS: VGS = –2.5 V, VDS = –0.7 V
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