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Design of a CMOS inverter circuit: Use the same device parameters as in Problem 5.6. The power supply voltage is VDD = 3.3 V. The channel length of both transistors is Ln = Lp = 0.8 um. (a) Determine the (Wn/Wp) ratio so that the switching (inversion) threshold voltage of the circuit is Vth = 1.4 V. (b) The CMOS fabrication process used to manufacture this inverter allows a variation of the VT0,n value by

Design of a CMOS inverter circuit: Use the same device parameters as in Problem 5.6. The power supply voltage is VDD = 3.3 V. The channel length of both transistors is Ln = Lp = 0.8 um. (a) Determine the (Wn/Wp) ratio so that the switching (inversion) threshold voltage of the circuit is Vth = 1.4 V. (b) The CMOS fabrication process used to manufacture this inverter allows a variation of the VT0,n value by

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Design of a CMOS inverter circuit: Use the same device parameters as in Problem 5.6. The power supply voltage is VDD = 3.3 V. The channel length of both transistors is Ln = Lp = 0.8 um. (a) Determine the (Wn/Wp) ratio so that the switching (inversion) threshold voltage of the circuit is Vth = 1.4 V. (b) The CMOS fabrication process used to manufacture this inverter allows a variation of the VT0,n value by

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Design a CMOS inverter circuit with the following parameters. The supply voltage is VDD = 1.3 V. The channel length of both transistors is Ln = Lp = 80 nm a) Determine the β ratio WP/Wn so that the switching (inversion) threshold voltage of the circuit is VM = 0.7 V b) The CMOS fabrication process used to manufacture this inverter allows a variation of the Vt, n value by ±20% around its nominal value, and a variation of the Vt, p value by ±20% around its nominal value. Assuming that all other parameters (such as μn, μp, Cox, Wn, Wp ) retain their nominal values, find the upper and lower limits of the switching threshold voltage (VM) of the circuit.

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