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Design the circuit shown (find RD and RG1) so that the transistor operates in saturation with ID = 0.5 mA and VD = 3 V. The PMOS has VTp = −1 V, and kp = 1 mA/V2. Assume RG2 = 6 kΩ.

Design the circuit shown (find RD and RG1) so that the transistor operates in saturation with ID = 0.5 mA and VD = 3 V. The PMOS has VTp = −1 V, and kp = 1 mA/V2. Assume RG2 = 6 kΩ.

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Design the circuit shown (find R D and R G 1 ) so that the transistor operates in saturation with I D = 0.5 m A and V D = 3 V . The PMOS has V T p = − 1 V , and k p = 1 m A / V 2 . Assume R G 2 = 6 k Ω .

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Design the circuit below so that the transistor operates in saturation with ID = 0.5 mA and VD = +3 V. Let transistor has Vt = −1 V and KP′(W/L) = 1 mA/V2, RG2 = 3 MΩ. What is the largest RD can have while maintaining saturation region operation?

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