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Diode-Connected MOSFET Active Regime. Consider a diode-connected MOSFET circuit given below where VDS = VGS. Find the drain current of M1 assuming RD = 1 kohm, W/L = 10/0.18, lambda = 0.1 V-1, and VDD = 1.8 V. Assume a threshold voltage of Vth = 0.4 V and a value of unCox = 200 uA/V2.

Diode-Connected MOSFET Active Regime. Consider a diode-connected MOSFET circuit given below where VDS = VGS. Find the drain current of M1 assuming RD = 1 kohm, W/L = 10/0.18, lambda = 0.1 V-1, and VDD = 1.8 V. Assume a threshold voltage of Vth = 0.4 V and a value of unCox = 200 uA/V2.

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Diode-Connected MOSFET Active Regime. Consider a diode-connected MOSFET circuit given below where VDS = VGS. Find the drain current of M1 assuming RD = 1 kohm, W/L = 10/0.18, lambda = 0.1 V-1, and VDD = 1.8 V. Assume a threshold voltage of Vth = 0.4 V and a value of unCox = 200 uA/V2.

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Diode Connected MOSFET. Consider a diode connected MOSFET circuit given below where VDS = VGS. The channel length modulation parameter (lambda) is zero. Find the drain current if (W/L) is 200, and for a drain resistor (RD) of 1 kohm, and a supply voltage VDD = 2 volts. Assume a threshold voltage of VT = 0.4 V and a value of unCox = 200 uA/volt^2.
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In the circuit below, the supply voltage is VDD = 2.5 V and the MOS transistors have process transconductance parameters μnCox = 0.3 mAV2 and μPCox = 0.2 mAV2, threshold voltages Vtn = −Vtp = 0.4 V, channel-length modulation coefficients λn = −λp = 0.1 V^−1, and channel lengths L1 = L2 = 0.2 μm. (a) Choose the widths of the transistors, W 1 and W 2, and the gate bias voltages, VG1 and VG2, such that the dc output voltage be Vo = VDD/2 and all transistors operate in saturation with an overdrive voltage of 0.5 V and a drain current of 85 μA. (b) Find the small-signal voltage gain vo/vi. Calculate the largest peak-to-peak amplitude of the input sinusoid vi and the corresponding amplitude of the output sinusoid vo that the circuit can handle while all transistors remain in saturation region.
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