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(DRAM operations) For a 1T-1C DRAM cell in a densely packed DRAM array, (a) During the write operation, to achieve a full VDD on the dynamic node X, three strategies have been proposed: (1) Extended write time; (2) WL boosting; (3) BL boosting. Which one(s) will be effective? (5 pts) (b) During the read operation, if we have Ccell = 5fF, CBL = 20fF and VDD = 1. 2V, what is the voltage perturbation on BL during the read operation? (5 pts)

(DRAM operations) For a 1T-1C DRAM cell in a densely packed DRAM array, (a) During the write operation, to achieve a full VDD on the dynamic node X, three strategies have been proposed: (1) Extended write time; (2) WL boosting; (3) BL boosting. Which one(s) will be effective? (5 pts) (b) During the read operation, if we have Ccell = 5fF, CBL = 20fF and VDD = 1. 2V, what is the voltage perturbation on BL during the read operation? (5 pts)

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  1. (DRAM operations) For a 1T-1C DRAM cell in a densely packed DRAM array, (a) During the write operation, to achieve a full V D D on the dynamic node X, three strategies have been proposed: (1) Extended write time; (2) WL boosting; (3) BL boosting. Which one(s) will be effective? (5 pts) (b) During the read operation, if we have C cell = 5 f F , C B L = 20 f F and V D D = 1.2 V , what is the voltage perturbation on BL during the read operation? (5 pts)

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