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EXERCISE D5.14 For the circuit in Fig. E5.14, find the value of R that results in the PMOS transistor operating with an overdrive voltage |Vov| = 0.6 V. The threshold voltage is Vtp = -0.4 V, the process transconductance parameter kp' = 0.1 mA/V^2, and WIL = 10 um/0.18 um.

EXERCISE D5.14 For the circuit in Fig. E5.14, find the value of R that results in the PMOS transistor operating with an overdrive voltage |Vov| = 0.6 V. The threshold voltage is Vtp = -0.4 V, the process transconductance parameter kp' = 0.1 mA/V^2, and WIL = 10 um/0.18 um.

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EXERCISE D5.14 For the circuit in Fig. E5.14, find the value of R that results in the PMOS transistor operating with an overdrive voltage |Vov| = 0.6 V. The threshold voltage is Vtp = -0.4 V, the process transconductance parameter kp' = 0.1 mA/V^2, and WIL = 10 um/0.18 um.

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For the circuits shown below, find the value of R that causes the PMOS transistor to operate with |VGS - Vtp| = 0.6 V. The threshold voltage is Vtp = -0.4V, kp'(W/L) = 5.6m(A/V^2).
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The PMOS transistor shown in Fig. E5.7 has Vtp = -1 V, kp' = 60 uA/V^2, and W/L = 10 (a) Find the range of VG for which the transistor conducts. (b) In terms of VG, find the range of VD for which the transistor operates in the triode region. (c) In terms of VG, find the range of VD, for which the transistor operates in saturation. (d) Neglecting channel-length modulation (i.e., assuming lambda =0), find the values of |Vov| and VG and the corresponding range of VD to operate the transistor in the saturation mode with ID = 75 uA. (e) If lambda = -0.02 V-1, find the value of ro corresponding to the overdrive voltage determined in (d). (f) For lambda = - 0.02 V-1 and for the value of Vov determined in (d), find ID, at VD = +3 V and at VD = 0 V; hence, calculate the value of the apparent output resistance in saturation. Compare to the value found in (e).
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10a) (15 Points) In the following circuit, an NMOS transistor is used to switch the current to the LED. Assume the following parameters: Microcontroller: vO = 4.6 V iOH < −5 mA and vOL = 0.4 V, iOL < 8 mA LED: vf = 2.0 V, PLED−max = 200 mW Desired LED current 100 mA Transistor: vT = 1.0 V, RDS(ON) = 0.5 Ω, iD−max = 500 mA a. When the output of the microcontroller is low, what is the operating region of the transistor? b. When the output of the microcontroller is high, what is the operating region of the transistor? c. With the microcontroller output high, and the transistor in the ohmic region, what value of R results in an on-state LED current of 100 mA? d. What standard value of resistor (Table is on page 33 of the text) comes closest to the desired LED current? 10b) Suppose we rearrange the NMOS circuit in problem 10 as shown. Using the same parameters as in the previous problem, answer the following: a. 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Assume the following parameters: Microcontroller: vO = 4.6 V iOH < −5 mA and vOL = 0.4 V, iOL < 8 mA LED: vf = 2.0 V, PLED−max = 200 mW Desired LED current 100 mA Transistor: vT = 1.0 V, RDS(ON) = 0.5 Ω, iD−max = 500 mA a. When the output of the microcontroller is low, what is the operating region of the transistor? b. When the output of the microcontroller is high, what is the operating region of the transistor? c. With the microcontroller output high, and the transistor in the ohmic region, what value of R results in an on-state LED current of 100 mA? d. What standard value of resistor (Table is on page 33 of the text) comes closest to the desired LED current? 10b) Suppose we rearrange the NMOS circuit in problem 10 as shown. Using the same parameters as in the previous problem, answer the following: a. When the output of the microcontroller is low, what is the operating region of the transistor? b. 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