Question

Notify Me Bookmark

Find the inverter threshold (value of Vin where both the nMOS and pMOS are in saturation) for VTn = -VTp = VT and the following beta ratios: Give your answers in terms of VDD. a. r = 1(Bn = Bp ) b. r = 0.1 c. r =0. 5 d. r = 2 e. r = 10

Find the inverter threshold (value of Vin where both the nMOS and pMOS are in saturation) for VTn = -VTp = VT and the following beta ratios: Give your answers in terms of VDD. a. r = 1(Bn = Bp ) b. r = 0.1 c. r =0. 5 d. r = 2 e. r = 10

Image text
Find the inverter threshold (value of Vin where both the nMOS and pMOS are in saturation) for VTn = -VTp = VT and the following beta ratios: Give your answers in terms of VDD. a. r = 1(Bn = Bp ) b. r = 0.1 c. r =0. 5 d. r = 2 e. r = 10

Detailed Answer

0 0

Please enter your email here. You will get email when this question is answered by our tutor.

Answer
Doubtrix Logo

This Problem has been solved!

You'll get a detailed, step-by-step and expert verified solution.

Join Doubtrix with 7-days free trial

  • Icon Correct & Verified Answers
  • Icon No AI-Generated Answers
  • Icon Video Solution for Difficult Questions
  • Icon Work With Experts to Reach at Correct Answers
Login Sign Up

Similar/Related Questions

Assumptions for all problems (unless specified otherwise, give answers to 10% ): VDD(V) VT0( V) Body effect γ(V 0.5 ) VDSAT( V) k’ (A/V 2) λ(V -1 ) NMOS 2.0 0.4 0 0.5 500×10-6 0 PMOS -0.4 0 -0.5 -200×10-6 0 1. All transistors have the minimum length (Lunit = 250 nm) 2. Ignore body effect and channel length modulation 3. A transistor's intrinsic capacitance (cap) and gate cap are equal, i.e., Cint = Cg, γ = 1 4. The unit-sized transistor has Wunit = Lunit and intrinsic cap Cint = Cg = Cdb = Csb = 1.0fF. 5. For the unit sized inverter, β = (W/L)P / (W/L N = WP/WN = 2, WN = L = 250 nm 6. The unit sized transmission gate has a resistance Req,tr = 10kΩ and all caps of 1.0fF. a) (6 pts) How does the following circuit operate? In a few words/charts, describe what it does Sketch the waveforms of nodes X and Q given the inputs shown below. Initial state of signals X and Q are unknown (mark with xxx as needed) until the impact of the input signals propagate. X Q b) (4 pts) How would you size each transistor? Match the 2:1 inverter (including the clock). Draw the sizing next to the schematic. Calculate the switch model equivalent resistance(s) (note the equation given at the front of the exam for Req, switch model capacitance(s) (based on your sizing), and worst-case propagation delay through the circuit, max(tpLH,tpLH), where output is taken from Q and inputs are IN1 and IN2. c) (4 pts) Calculate the energy consumption from the VDD power supply of this circuit for the input pattern and time duration given in the timing diagram (previous page). Ignore the energy consumption related to driving IN1, IN2, and CLK. State any assumptions you need to make to determine a numerical value.

Assumptions for all problems (unless specified otherwise, give answers to 10% ): VDD(V) VT0( V) Body effect γ(V 0.5 ) VDSAT( V) k’ (A/V 2) λ(V -1 ) NMOS 2.0 0.4 0 0.5 500×10-6 0 PMOS -0.4 0 -0.5 -200×10-6 0 1. All transistors have the minimum length (Lunit = 250 nm) 2. Ignore body effect and channel length modulation 3. A transistor's intrinsic capacitance (cap) and gate cap are equal, i.e., Cint = Cg, γ = 1 4. The unit-sized transistor has Wunit = Lunit and intrinsic cap Cint = Cg = Cdb = Csb = 1.0fF. 5. For the unit sized inverter, β = (W/L)P / (W/L N = WP/WN = 2, WN = L = 250 nm 6. The unit sized transmission gate has a resistance Req,tr = 10kΩ and all caps of 1.0fF. a) (6 pts) How does the following circuit operate? In a few words/charts, describe what it does Sketch the waveforms of nodes X and Q given the inputs shown below. Initial state of signals X and Q are unknown (mark with xxx as needed) until the impact of the input signals propagate. X Q b) (4 pts) How would you size each transistor? Match the 2:1 inverter (including the clock). Draw the sizing next to the schematic. Calculate the switch model equivalent resistance(s) (note the equation given at the front of the exam for Req, switch model capacitance(s) (based on your sizing), and worst-case propagation delay through the circuit, max(tpLH,tpLH), where output is taken from Q and inputs are IN1 and IN2. c) (4 pts) Calculate the energy consumption from the VDD power supply of this circuit for the input pattern and time duration given in the timing diagram (previous page). Ignore the energy consumption related to driving IN1, IN2, and CLK. State any assumptions you need to make to determine a numerical value.

Assumptions for all problems (unless specified otherwise, give answers to 10% ): VDD(V) VT0( V) Body effect γ(V 0.5 ) VDSAT( V) k’ (A/V 2) λ(V -1 ) NMOS 2.0 0.4 0 0.5 500×10-6 0 PMOS -0.4 0 -0.5 -200×10-6 0 1. All transistors have the minimum length (Lunit = 250 nm) 2. Ignore body effect and channel length modulation 3. A transistor's intrinsic capacitance (cap) and gate cap are equal, i.e., Cint = Cg, γ = 1 4. The unit-sized transistor has Wunit = Lunit and intrinsic cap Cint = Cg = Cdb = Csb = 1.0fF. 5. For the unit sized inverter, β = (W/L)P / (W/L N = WP/WN = 2, WN = L = 250 nm 6. The unit sized transmission gate has a resistance Req,tr = 10kΩ and all caps of 1.0fF. a) (6 pts) How does the following circuit operate? In a few words/charts, describe what it does Sketch the waveforms of nodes X and Q given the inputs shown below. Initial state of signals X and Q are unknown (mark with xxx as needed) until the impact of the input signals propagate. X Q b) (4 pts) How would you size each transistor? Match the 2:1 inverter (including the clock). Draw the sizing next to the schematic. Calculate the switch model equivalent resistance(s) (note the equation given at the front of the exam for Req, switch model capacitance(s) (based on your sizing), and worst-case propagation delay through the circuit, max(tpLH,tpLH), where output is taken from Q and inputs are IN1 and IN2. c) (4 pts) Calculate the energy consumption from the VDD power supply of this circuit for the input pattern and time duration given in the timing diagram (previous page). Ignore the energy consumption related to driving IN1, IN2, and CLK. State any assumptions you need to make to determine a numerical value.
Solution
0 0

Solve the following problems for a 180 nm 6-layer process having the following measured parameters:Effective output resistance of a unit transistor Ω = 9 kΩGate capacitance of a unit transistor = 7 fF. Relative mobility = 2 Width of a minimum width metal 4 wire = 450 nm. Sheet resistance of metal 4 = 0.03 Ω Let the unit inverter's nMOS transistor have gate width = 3 lambda = 270 nm You may ignore diffusion parasitics. Assume a minimum width wire route of 7 mm in layer 4 metal with Cw = 210 aF/μm. How many repeaters should be inserted for minimum delay? How large should the repeaters be (in terms of multiples of the unit inverter) and what will the delay be once repeaters are inserted?

Solution
0 0

The introduction to basic logic-circuit concepts that apply to MOSFET circuits is the most popular technology for implementation of digital systems. The two families of MOS logic circuits introduce are NMOS and CMOS (a) Given a NMOS inverter with a current source pull-up using the following specification data: μnCox = 50 μA/V2, μpCox = 25 μA/V2 VTn = −VTp = 1 V, VDD = 5 V, Ln = Lp = 1.5 μm λn = λp = 0.1 V−1 Find the width of the device so its saturation current is 200 μA when VB = 3 V. (5 marks) ii. Calculate the required width of the n-channel device so VOUT is 0.05 V when VIN is 5 V. (5 marks) (b) Consider a simple NMOS inverter with a resistor pull-up as shown in Figure 5 using the following specification data. i. Determine the value of pull-up resistor, R for the inverter. (4 marks) ii. Find the required value for fabrication width and length, (W/L). ( 6 marks) μnCox = 100 μA/V2, VTn = −VTp = 1 V V1 = 5 V, VDD = 5 V, VO = 50 mV, rDS = 50 ohm
Solution
0 0