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Find the maximum allowable W/L for the access transistors for the SRAM cell in below circuit so that in read operation, the voltages at Q and Q¯ do not change more than |Vt|⋅L = Lmin = 0.5 μm, VDD = 1 V, Vtn = −Vtp = 0.35 V, (W/L)n = 2

Find the maximum allowable W/L for the access transistors for the SRAM cell in below circuit so that in read operation, the voltages at Q and Q¯ do not change more than |Vt|⋅L = Lmin = 0.5 μm, VDD = 1 V, Vtn = −Vtp = 0.35 V, (W/L)n = 2

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Q3, Find the maximum allowable W/L for the access transistors for the SRAM cell in below circuit so that in read operation, the voltages at Q and Q ¯ do not change more than | V t | ⋅ L = L min = 0.5 μ m , V D D = 1 V , V t n = − V t p = 0.35 V , ( W / L ) n = 2

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