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Find the maximum allowable W/L for the access transistors of the 6 T SRAM cell so that in the read operation, the voltages at Q and Q¯ do not change by more than |VT|. Assume that the SRAM is fabricated in a 0.13 μm technology for which VDD = 1.2 V and VTn = |VTp| = 0.4 V, and (W/L)n = 1.5. Find VQ¯ and I5 that result in each of the following cases: (a) (W/L)a = 13 the maximum allowed (5 points) (b) (W/L)a = the maximum allowed (5 points) Assume that μnCox = 500 μA/V2

Find the maximum allowable W/L for the access transistors of the 6 T SRAM cell so that in the read operation, the voltages at Q and Q¯ do not change by more than |VT|. Assume that the SRAM is fabricated in a 0.13 μm technology for which VDD = 1.2 V and VTn = |VTp| = 0.4 V, and (W/L)n = 1.5. Find VQ¯ and I5 that result in each of the following cases: (a) (W/L)a = 13 the maximum allowed (5 points) (b) (W/L)a = the maximum allowed (5 points) Assume that μnCox = 500 μA/V2

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  1. Find the maximum allowable W / L for the access transistors of the 6 T SRAM cell so that in the read operation, the voltages at Q and Q ¯ do not change by more than | V T | . Assume that the SRAM is fabricated in a 0.13 μ m technology for which V D D = 1.2 V and V T n = | V T p | = 0.4 V , and ( W / L ) n = 1.5 . Find V Q ¯ and I 5 that result in each of the following cases: (a) ( W / L ) a = 1 3 the maximum allowed (5 points) (b) ( W / L ) a = the maximum allowed (5 points)
Assume that μ n C o x = 500 μ A / V 2

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