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Find the maximum allowable W/L for the access transistors of the SRAM cell shown below so that in a read operation, the voltages at Q and Q¯ do not change by more than |Vt|. Assume that the SRAM is fabricated in a 0.18 μm technology for which VDD = 1.8 V, Vtn = |Vtp| = 0.5 V and that (W/L)n = 1.5.

Find the maximum allowable W/L for the access transistors of the SRAM cell shown below so that in a read operation, the voltages at Q and Q¯ do not change by more than |Vt|. Assume that the SRAM is fabricated in a 0.18 μm technology for which VDD = 1.8 V, Vtn = |Vtp| = 0.5 V and that (W/L)n = 1.5.

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Find the maximum allowable W / L for the access transistors of the SRAM cell shown below so that in a read operation, the voltages at Q and Q ¯ do not change by more than | V t | . Assume that the SRAM is fabricated in a 0.18 μ m technology for which V D D = 1.8 V , V t n = | V t p | = 0.5 V and that ( W / L ) n = 1.5 .

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