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For a MOSFET biased in the triode region, we can define an equivalent drain-source resistance as rDS,tri = (∂ID ∂VDS)−1 Derive an expression for this quantity and compare it with the equivalent resistance in the deep-triode region Ron we derived in class. Also plot rDS,tri as a function of VDS.

For a MOSFET biased in the triode region, we can define an equivalent drain-source resistance as rDS,tri = (∂ID ∂VDS)−1 Derive an expression for this quantity and compare it with the equivalent resistance in the deep-triode region Ron we derived in class. Also plot rDS,tri as a function of VDS.

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For a MOSFET biased in the triode region, we can define an equivalent drain-source resistance as
r D S , tri = ( ∂ I D ∂ V D S ) − 1
Derive an expression for this quantity and compare it with the equivalent resistance in the deep-triode region R on we derived in class. Also plot r D S , tri as a function of V D S .

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