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For a n+ polysilicon gate MOS capacitor with P substrate, it is given that CaxWL = 180 pF, NA = 5×1017 cm−3 and area = 1.0×10−3 cm2, find: a) the flatband voltage (assuming the workfunction of the n+ polysilicon is at the conduction band edge of silicon) b) the MOS capacitance at flat-band c) the minimum MOS capacitance in the C-V curve d) the threshold voltage of the MOS capacitor.

For a n+ polysilicon gate MOS capacitor with P substrate, it is given that CaxWL = 180 pF, NA = 5×1017 cm−3 and area = 1.0×10−3 cm2, find: a) the flatband voltage (assuming the workfunction of the n+ polysilicon is at the conduction band edge of silicon) b) the MOS capacitance at flat-band c) the minimum MOS capacitance in the C-V curve d) the threshold voltage of the MOS capacitor.

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For a n + polysilicon gate MOS capacitor with P substrate, it is given that C a x W L = 180 p F , N A = 5 × 10 17 c m − 3 and area = 1.0 × 10 − 3 c m 2 , find: a) the flatband voltage (assuming the workfunction of the n + polysilicon is at the conduction band edge of silicon) b) the MOS capacitance at flat-band c) the minimum MOS capacitance in the C-V curve d) the threshold voltage of the MOS capacitor.

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