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For a technology in which Vtn = 0.3VDD, show that the maximum current that the inverter can sink while its low-output level does not exceed 0.1 VDD is 0.065 k

For a technology in which Vtn = 0.3VDD, show that the maximum current that the inverter can sink while its low-output level does not exceed 0.1 VDD is 0.065 k

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For a technology in which Vtn = 0.3VDD, show that the maximum current that the inverter can sink while its low-output level does not exceed 0.1 VDD is 0.065 k

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For a technology in which show Vtn = 0.2VDD that the maximum current that the inverter can sink while its low-output level does not exceed 0.1VDD is 0.075 kn'(W/L)nVDD. For VDD = 2.5V, kn' = 115 μA/V2, find (W/L) that permits this maximum current to be 0.5 mA.
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For a technology in which Vin = 0.3 VDD, show that the maximum current that the inverter can sink while its low-output level doesn't exceed 0.1 VDD is 0.07kn'(W/L)nVDD^2

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D 16.20 Consider a 6 T SRAM cell fabricated in a 0.18−μm CMOS process for which Vtn = |Vtp| = 0.5 V and VDD = 1.8 V. If during a read-1 operation it is required that VQ¯ not exceed 0.2 V, use the graph in Fig. 16.14 to determine the maximum allowable value of the ratio (W/L)5/(W/L)1. For L1 = L5 = 0.18 μm, select values for W1 and W5 that minimize the combined areas of Q1 and Q5. Assume that the minimum width allowed is 0.18 μm. Figure 16.14 The normalized value of Vϱ¯ versus the ratio (W/L)5/(W/L)1, for the circuit in Fig. 16.13. This graph can be used to determine the maximum value permitted for (W/L)5/(W/L)1 so that VQ¯ is kept below a desired level.
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