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For the 6 T SRAM cell shown below, select all statements below that are true. When performing a read operation, the Bit line (B) and Bit_bar line (Bbar) are pre-charged to VDD Volts. When reading a logic 1 from Q (and logic 0 from Q bar), the right half of the circuit comprising Q3 and Q6 is conducting. When reading a logic 0 from Q (and logic 1 from Q bar), the right half of the circuit comprising Q3 and Q6 is conducting. During the write operation, both Q and Qbar are simultaneously set to B and Bbar using the two conducting access transistors, Q5 and Q6.

For the 6 T SRAM cell shown below, select all statements below that are true. When performing a read operation, the Bit line (B) and Bit_bar line (Bbar) are pre-charged to VDD Volts. When reading a logic 1 from Q (and logic 0 from Q bar), the right half of the circuit comprising Q3 and Q6 is conducting. When reading a logic 0 from Q (and logic 1 from Q bar), the right half of the circuit comprising Q3 and Q6 is conducting. During the write operation, both Q and Qbar are simultaneously set to B and Bbar using the two conducting access transistors, Q5 and Q6.

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For the 6T SRAM cell shown below, select all statements below that are true. When performing a read operation, the Bit line ( B ) and Bit_bar line (Bbar) are pre-charged to V D D Volts. When reading a logic 1 from Q (and logic 0 from Q bar), the right half of the circuit comprising Q 3 and Q 6 is conducting. When reading a logic 0 from Q (and logic 1 from Q bar), the right half of the circuit comprising Q 3 and Q 6 is conducting. During the write operation, both Q and Q b a r are simultaneously set to B and Bbar using the two conducting access transistors, Q 5 and Q 6 -

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