Question

Notify Me Bookmark

For the basic/reference inverter with n = (W/L)n = 1.5 and p = (W/L)p = 3, find the proper W/L for transistor Q1 and Q4. W/L for Q1, Q4: O 3, 3 6, 1.5 3, 1.5 6, 6 6, 3 If the basic/reference inverter with n = (W/L)n = 1.5 and p = (W/L) = 3. Find the proper W/L for transistors Q1 and Q4

For the basic/reference inverter with n = (W/L)n = 1.5 and p = (W/L)p = 3, find the proper W/L for transistor Q1 and Q4. W/L for Q1, Q4: O 3, 3 6, 1.5 3, 1.5 6, 6 6, 3 If the basic/reference inverter with n = (W/L)n = 1.5 and p = (W/L) = 3. Find the proper W/L for transistors Q1 and Q4

Image text
For the basic/reference inverter with n = (W/L)n = 1.5 and p = (W/L)p = 3, find the proper W/L for transistor Q1 and Q4. W/L for Q1, Q4: O 3, 3 6, 1.5 3, 1.5 6, 6 6, 3 If the basic/reference inverter with n = (W/L)n = 1.5 and p = (W/L) = 3. Find the proper W/L for transistors Q1 and Q4

Detailed Answer

0 0

Please enter your email here. You will get email when this question is answered by our tutor.

Doubtrix Logo

Problem is not yet solved!

Click on Notify me to get email when question is answered.

Join Doubtrix with 7-days free trial

  • Icon Correct & Verified Answers
  • Icon No AI-Generated Answers
  • Icon Video Solution for Difficult Questions
  • Icon Work With Experts to Reach at Correct Answers
Notify me Login Sign Up

Similar/Related Questions

The enhancement-type MOS transistors have the following parameters: VDD = 5 V |VT0| = 1.0 V for both nMOS and pMOS transistor lambda = 0.0 V-1 upCox = 20 uA/V2 unCox = 50 uA/V2 For a CMOS complex gate OAI432 with (W/L)p = 30 and (W/L)n = 40, (a) Calculate the W/L sizes of an equivalent inverter with the weakest pull-down and pull-up. Such an inverter can be used to calculate worst-case pullup and pull-down delays, with proper incorporation of parasitic capacitances at internal nodes into the total load capacitance. In this problem, you are asked to calculate only (W/L)worse-case for both p-channel and n-channel MOSFETs by neglecting the parasitic capacitances.
Solution
1 0

7.12 The enhancement-type MOS transistors have the following parameters: VDD = 5 V VT0 = 1.0 V for both nMOS and pMOS transistor λ = 0.0 V -1 μpCox = 20 μA/V2 μnCox = 50 μA/V2 For a CMOS complex gate OAI432 with (W/L)p = 30 and (W/L)n = 40, (a) Calculate the W/L sizes of an equivalent inverter with the weakest pull-down and pull-up. Such an inverter can be used to calculate worst-case pull-up and pull-down delays, with proper incorporation of parasitic capacitances at internal nodes into the total load capacitance. In this problem, you are asked to calculate only (W/L) worse - case for both p-channel and n-channel MOSFETs by neglecting the parasitic capacitances.

Solution
1 0

Find the width of all transistors used to implement the following CMOS gate so the delay is not worse than a basic inverter. Assume that for a reference inverter: (W/L)n = n = 1.5, and (W/L)p = p = 3. Finally, the channel length (L) of all transistors is 90 nm.
Solution
0 0