For the BJT circuit shown Fig. Q7, the bipolar junction transistor (BJT) Q1 has the following parameters: IS = 10-15 A and β = 100. The temperature, T = 300 K. (a) Determine the Thevenin equivalent of the circuit within the dashed line box, as shown in Fig. Q7. (6 marks) (b) Determine the values of VB, VC and Vl, and the operation mode of the BJT Q1.
Image text
For the BJT circuit shown Fig. Q7, the bipolar junction transistor (BJT) Q1 has the following parameters: IS = 10-15 A and β = 100. The temperature, T = 300 K. (a) Determine the Thevenin equivalent of the circuit within the dashed line box, as shown in Fig. Q7. (6 marks) (b) Determine the values of VB, VC and Vl, and the operation mode of the BJT Q1.
![Q2. Consider the amplifier shown in Fig. Q2. The npn bipolar junction transistor has the following parameter values: β = 100, VA = 100 V. Fig. Q2 (a) For the maximum power transfer to load, RL, what should Rout be? [ Ans: Rout = 100 Ω] (b) To have the desired Rout of part (a), what should the specified gm, Q1 be? (You may need to make some assumption for resistors R1, R2 and RE ) [Ans: gm,Q1 = 10 mA/V] (c) What is the amplifier configuration? Sketch the equivalent 2-port network of the amplifier circuit in Fig. Q2. (d) Set R1 = 100 kΩ and RE = 5 kΩ, calculate R2 to complete the design. [Ans: R2 = 64 kΩ] (e) Calculate the input resistance of the amplifier, Rin. [ Ans: Rin≈13.2 kΩ] (f) Calculate the voltage gain vout /vs. [ Ans: vout/vs ≈ 0.49]](https://www.doubtrix.com/uploads/editor/3570052002cfKilvrcaZ.png)