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For the circuit below, find the maximum value of RD for transistor M1 to remain in saturation. Assume Vtn = 0.5 V, unCox = 200uA/V2, W/L = 5/0.18 and lambda = 0 V-1.

For the circuit below, find the maximum value of RD for transistor M1 to remain in saturation. Assume Vtn = 0.5 V, unCox = 200uA/V2, W/L = 5/0.18 and lambda = 0 V-1.

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For the circuit below, find the maximum value of RD for transistor M1 to remain in saturation. Assume Vtn = 0.5 V, unCox = 200uA/V2, W/L = 5/0.18 and lambda = 0 V-1.

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Q1: (a) Choose VB such that M1 is 200mV away from the triode (linear) region. Assume Vtn = 0.5 V, unCox = 200 uA/V2, and VDD = 2.5 V ID1 = ID2 = 0.5 mA,( W/L)1 = 80u/5u, (W/L)2 = 40u/5u, and Rd = 1 kohm hint: gm = 2unCox(W/L)ID = 2ID/VGS-Vth Q1: (b) Calculate the small signal voltage gain Assumptions remain the same as Q1(a) Q1: (c) Using the value of VB from part (a), calculate the maximum output voltage swing that keeps both transistors in saturation. Assumptions remain the same as Q1(a).Choose VB such that M1 is 200 mV away from the triode (linear) region. Assume Vtn = 0.5 V, μnCox = 200 μA/V2, and VDD = 2.5V ID1 = ID2 = 0.5 mA, (W/L)1 = 80u/5u, (W/L)2 = 40u/5u, and Rd = 1 kΩ
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a) Assuming we can control the VIN between 0.5 V and 2.5 V, find the maximum value for resistor R as a function of VIN for the NMOS to stay in saturation. Note: The pullup resistor R is preferred to be large, a bit too large, and we go into the linear region of operation. b) Assume we want to keep the VOUT at 1.5 V, and ID at 200 uA. What should be the values for bias voltage VIN and resistor R? c) Based on part (b) values, find the maximum and minimum values for VOUT and VIN so that the NMOS stays in saturation. d) Based on part (b) values, find open circuit small signal gain, AV. Hint: Need to find values for gm and g0 first. For the following NMOS amplifier (driving load RL ) with the following parameters: Vdd = 2.5v Vbs = 0 RL = 10 k Vt0 = 0.5v lambda = 0.11v-1 W/L = 10 unCox = 200.0 uA/V2 Suppose the load resistor, RL, is not connected (open circuit):

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For the circuit in Fig. E5.9, find the value of R that results in VD = 0.7 V. The MOSFET has Vtn = 0.5V, unCox = 0.4 mA/V^2, W/L = 0.72 um/0.18 um, and lambda = 0. Ans. 34.4 k ohm
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