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For the circuit given, transistor parameters are β = 100, VBE = 0.7 V, Vth,p = −1 V, μpCox(W/L) = 50 μA/V2. a) Design a bias stable circuit that BJT operates at the active region and MOS transistor operates at saturation region. b) Find the voltage gain, vo/vs

For the circuit given, transistor parameters are β = 100, VBE = 0.7 V, Vth,p = −1 V, μpCox(W/L) = 50 μA/V2. a) Design a bias stable circuit that BJT operates at the active region and MOS transistor operates at saturation region. b) Find the voltage gain, vo/vs

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Q1) (60p) For the circuit given, transistor parameters are β = 100 , V B E = 0.7 V , V t h , p = − 1 V , μ p C o x ( W / L ) = 50 μ A / V 2 . a) Design a bias stable circuit that BJT operates at the active region and MOS transistor operates at saturation region. b) Find the voltage gain, v d / v s

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