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For the circuit in Figure Q1, VDD = 4 V, Iref = 0.4 mA, (W/L)1 = 1, (W/L)2 = 2, (W/L)3 = 2, (W/L)4 = 8, (W/L)5 = 24, and (W/L)6 = 6, VtP = −1 V, and kp′ = 5 mA/V2. (a) Find Iout. (b) What are the DC voltages at nodes X and Y. (c) If |VA| = 20 V for PMOS transistors, find Rout. Figure Q1

For the circuit in Figure Q1, VDD = 4 V, Iref = 0.4 mA, (W/L)1 = 1, (W/L)2 = 2, (W/L)3 = 2, (W/L)4 = 8, (W/L)5 = 24, and (W/L)6 = 6, VtP = −1 V, and kp′ = 5 mA/V2. (a) Find Iout. (b) What are the DC voltages at nodes X and Y. (c) If |VA| = 20 V for PMOS transistors, find Rout. Figure Q1

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For the circuit in Figure Q 1 , V D D = 4 V , I ref = 0.4 m A , ( W / L ) 1 = 1 , ( W / L ) 2 = 2 , ( W / L ) 3 = 2 , ( W / L ) 4 = 8 , ( W / L ) 5 = 24 , and ( W / L ) 6 = 6 , V t P = − 1 V , and k p ′ = 5 m A / V 2 . (a) Find I out- (b) What are the DC voltages at nodes X and Y . (c) If | V A | = 20 V for PMOS transistors, find R out . Figure Q1

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For the circuit in Figure Q1, VDD = 4 V, Iref = 0.4 mA, (W/L)1 = 1, (W/L)2 = 2, (W/L)3 = 2, (W/L)4 = 8, (W/L)5 = 24, and (W/L)6 = 6, Vpp = −1 V, and kp′ = 5 mA/V2. (a) Find Iout. (b) What are the DC voltages at nodes X and Y. (c) If |VA| = 20 V for PMOS transistors, find Rout . Figure Q1

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Consider the CMOS op amp of Fig. 9.37 when fabricated in a 0.13-µm CMOS technology for which μnCox = 4µpCox = 512 µA/V2, |Vt| = 0.4 V, and VDD = VSS = 0.65 V. For a particular design, 1 = 128 µA, (W/L), = (W/L)2 = 1/2(W/L)5 = 44.4, and (W/L)3 = (W/L)4 = 11.1. (a) Find the (W/L) ratios of Q6 and Q7 so that I6 = 128 µA. (b) Find the overdrive voltage, |Vov|, at which each of Q1, Q2, and Q6 is operating. (c) Find gm for Q1, Q2, and Q6. (d) If|VA|= 3.2 V, find ro2, ro4, ro6 and ro7 (e) Find the voltage gains A1 and A2, and the overall gain A.

Consider the CMOS op amp of Fig. 9.37 when fabricated in a 0.13-µm CMOS technology for which μnCox = 4µpCox = 512 µA/V2, |Vt| = 0.4 V, and VDD = VSS = 0.65 V. For a particular design, 1 = 128 µA, (W/L), = (W/L)2 = 1/2(W/L)5 = 44.4, and (W/L)3 = (W/L)4 = 11.1. (a) Find the (W/L) ratios of Q6 and Q7 so that I6 = 128 µA. (b) Find the overdrive voltage, |Vov|, at which each of Q1, Q2, and Q6 is operating. (c) Find gm for Q1, Q2, and Q6. (d) If|VA|= 3.2 V, find ro2, ro4, ro6 and ro7 (e) Find the voltage gains A1 and A2, and the overall gain A.

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(b) For a MOSFET current source shown in Figure 5 the circuit parameters are: V+ = 3 V and V − = −3 V. Transistor parameters for NMOS are: VTN = 0.7 V, kn′ = 200 μA/V2 and λn = 0.01 V−1; and the transistor parameters for PMOS are: VTP = −0.6 V, kp′ = 80 μA/V2 and λp = 0.03 V−1. The transistor aspect ratios are: (W/L)1 = 10, (W/L)2 = 35, (W/L)3 = 5 and (W/L)4 = 15. Find IO, IREF and the VGS voltages for all transistors if the minimum voltage at the drain of transistor M2, i.e. VD2 is −2.3 V. [12 Marks] Figure 5
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