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For the following transfer characteristic for an nMOS MOSFET at VDS = 0.5V so you can safely assume that you are in triode region above threshold: a. Write down the threshold voltage (5) VGS = 1.5v b. Given that the channel electron mobility μn = 1200 cm2/Vs, and that the oxide thickness is 20 nm, determine the W/L ratio (20).

For the following transfer characteristic for an nMOS MOSFET at VDS = 0.5V so you can safely assume that you are in triode region above threshold: a. Write down the threshold voltage (5) VGS = 1.5v b. Given that the channel electron mobility μn = 1200 cm2/Vs, and that the oxide thickness is 20 nm, determine the W/L ratio (20).

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For the following transfer characteristic for an nMOS MOSFET at V D S = 0.5 V so you can safely assume that you are in triode region above threshold: a. Write down the threshold voltage (5)
VGS = 1.5 v
b. Given that the channel electron mobility μ n = 1200 c m 2 / V s , and that the oxide thickness is 20 n m , determine the W / L ratio (20).

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