For the JFET biasing shown in Figur:8-16(a), determine the values of ID, VGS and VDS given that IDSS = 3 mA, VGS (off) = −2.4 V, RG = 10 MΩ and VDD = 10 V, RS = 350 Ω, RD = 1.9 KΩ. (a) n channel (b) p channel FIGURE 8−16 Self-biased JFETs (IS = ID in all FETs ).
![[Small Signal Analysis] Consider the following amplifier circuit consisting of an N-type MOSFET, λ = 0 and vSB = 0. RG = 100kΩ, RD = 3kΩ, RS = 1kΩ, CC and CS are both so large that 1/(jωC) ∼ 0 at the frequency of interest. VDD = 1.0v. The MOSFET has kn = 0.8 mA/V2 and Vt = 0.4v. (a) Analyze the DC bias point of this circuit. What are the DC values of VOUT and VS , respectively? (b) Calculate gm for the MOSFET. (c) What is the maximum allowed value of RD so that the MOS transistor remains in saturation mode? (d) Draw the small signal equivalent circuit for this amplifier. (e) What is the small signal gain Av? (f) What is the input resistance Rin?](https://www.doubtrix.com/uploads/editor/3805147532ZwJkivSixk.png)
![In Fig. 5, VDD = 2.5 V, VB1 = 1 V, RG = 100 kΩ, RD = 10 kΩ, R1 = 10 kΩ, (W/L)1 = (W/L)2 = (W/L)3 = (W/L)4 = (1/0.1). CC1∼CC3 are very large. (a) Determine the VB2 such that the output (Vout) swing is maximized while all MOSFETs operate in the saturation region. (b) For a dc input of Vin = 1 V, determine Vx, Vz and Vout. Fig. 5 (c) When Vin(t) = 1[V] + 10[mV]sin(ωt) is applied, determine Vout(t). (10)](https://www.doubtrix.com/uploads/editor/3770622967fpfOfEpcYQ.jpg)
