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For the n-channel MOSFET transistor we have the following information: tox = 2 nm L = 0.2 μm, W = 1 μm, Lov = 0.03 μm, Csb0 = Cdb0 = 2 fF V0 = 1 V, VSB = 0.1 V VDS = 0.9 V, ε0 = 3.45×10-11 F/m. Find all the internal capacitance values for this NMOS.

For the n-channel MOSFET transistor we have the following information: tox = 2 nm L = 0.2 μm, W = 1 μm, Lov = 0.03 μm, Csb0 = Cdb0 = 2 fF V0 = 1 V, VSB = 0.1 V VDS = 0.9 V, ε0 = 3.45×10-11 F/m. Find all the internal capacitance values for this NMOS.

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For the n-channel MOSFET transistor we have the following information: tox = 2 nm L = 0.2 μm, W = 1 μm, Lov = 0.03 μm, Csb0 = Cdb0 = 2 fF V0 = 1 V, VSB = 0.1 V VDS = 0.9 V, ε0 = 3.45×10-11 F/m. Find all the internal capacitance values for this NMOS.

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3) For an n-channel MOSFET with tox = 10nm, L = 1.0μm, W = 10μm, Lov = 0.05μm, Csb0 = Cdb0 = 10fF, V0 = 0.6V, VSB = 1V, and VDS = 2V, Eox = 3.9, calculate the following capacitances when the transistor is operating in saturation: Cox, Cov, Cgs, Cgd, Csb, and Cdb. 4) Calculate fT for the n-channel MOSFET whose capacitances were found in the problem 3 above. Assume operation at 100uA, and that kn' = 160μA/V^2.

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