Question

Notify Me Bookmark

For the short-channel device shown in Figure 4, given that Vdd = 2.5 V, Vt0 = 0.4 V, γ = 0.1 V0.5, velocity saturation voltage V'DSAT = 1 V, |2ϕF| = 0.6 V. [15 pts] a) Determine the different modes of the device while Vo is changed from 0 to Vdd. [ 7 pts ] b) Derive the condition for Vo at the boundary of each operation mode and give the corresponding value of Vo. [8 pts ] Hint: Threshold voltage Vt = Vt0 + γ(2ϕF+VSB − 2ϕF). Figure 4. The short-channel device.

For the short-channel device shown in Figure 4, given that Vdd = 2.5 V, Vt0 = 0.4 V, γ = 0.1 V0.5, velocity saturation voltage V'DSAT = 1 V, |2ϕF| = 0.6 V. [15 pts] a) Determine the different modes of the device while Vo is changed from 0 to Vdd. [ 7 pts ] b) Derive the condition for Vo at the boundary of each operation mode and give the corresponding value of Vo. [8 pts ] Hint: Threshold voltage Vt = Vt0 + γ(2ϕF+VSB − 2ϕF). Figure 4. The short-channel device.

Image text
For the short-channel device shown in Figure 4, given that V dd = 2.5 V , V t 0 = 0.4 V , γ = 0.1 V 0.5 , velocity saturation voltage V' DSAT = 1 V , | 2 ϕ F | = 0.6 V . [15 pts] a) Determine the different modes of the device while V o is changed from 0 to V dd . [ 7 pts ] b) Derive the condition for V o at the boundary of each operation mode and give the corresponding value of V o. [8 pts ] Hint: Threshold voltage V t = V t 0 + γ ( 2 ϕ F + V S B − 2 ϕ F ) .
Figure 4. The short-channel device.

Detailed Answer

1 0

Please enter your email here. You will get email when this question is answered by our tutor.

Answer
Doubtrix Logo

This Problem has been solved!

You'll get a detailed, step-by-step and expert verified solution.

Join Doubtrix with 7-days free trial

  • Icon Correct & Verified Answers
  • Icon No AI-Generated Answers
  • Icon Video Solution for Difficult Questions
  • Icon Work With Experts to Reach at Correct Answers
Login Sign Up
  • Student Reviews:
  • (1)
  • Complete solution (1)
  • Step-by-step solution (1)
  • Fully explained (1)

Similar/Related Questions

Problem 2: Regions of Operation (a) Determine the different operation mode of the device while V0 is changed from 0 to Vdd. Derive the condition for V0 at the boundary of each operation mode using the unified short channel MOS model. Calculate the boundary values of V0. Assume Vdsat does not change with Vt. Vdd = 1 V, Vt0 = 0.33 V, kγ = 0.1 V/V ( linear body effect coefficient), Vdsat = 0.55 V, λ = 0 V−1, k′ = μnCox = 30∗10−6 A/V2, W/L = 300 nm/100 nm (b) What are the values of Ids for V0 = Vdd and V0 = 0.5 V dd. You do NOT need to simplify (e. g. , you can just list the expressions such as A/B∗10−x or A∗(B−C)∗10−x).

Solution
0 0

For the amplifier below, following design information is provided: VDD = 3.3 V, R = 2.4 kΩ, ISS = 1.8 mA, k1 = k2 = 5 mA/V2, VTH,1 = VTH,2 = 0.5 V, λ = 0.1 V−1, γ = 0, ki′ = μ0Cox, ki = μ0 Cox(W L)i. Assume that both transistors are identical and in the saturation region. Finally, NMOS and PMOS bulk terminals are connected to the ground and VDD, respectively. a) What is the DC bias voltage for M1 and M2 given that the voltage drop across ISS is 0.4 V ? You can neglect the channel length modulation, here. Check that the transistors are in the correct operation-mode. b) The resistors will be realized using identical PMOS transistors M3 and M4. If the transistors to be used will have k3 = k4 = 1.5 mA/V2, what will be their overdrive voltages? Check that the transistors are in the correct operation-mode. c) What is the differential voltage gain AV,diff = Vout/Vid in dB ? d) ISS will be realized as a cascode current source. Assume that the voltage drop of 0.4 V is equally shared by the two transistors, M5 and M6 having k5′ = k6′ = 0.5 mA/V2 and VTH, 5 = VTH, 6 = 0.5 V. Assuming the gate voltages of both transistors are 1 V, find the W/L ratios of each device. Once again, you can neglect the channel length modulation here. e) Considering (d), how would the W/L ratios qualitatively change (increase/decrease/stays the same), if γ > 0 ? Explain your reasoning analytically, i. e. , using appropriate equations. f) Using the cascode current source, calculate the common-mode gain of the circuit AV, CM = Vout /Vin in dB, where Vin . s applied to the gates of both M1 and M2. Assume λ = 0.1 V−1 for M5 and M6. g) Calculate the CMRR of the circuit in dB.
Solution
0 0

The circuit in Figure 1 is an NMOS switch circuit. Assume VDD = 5 V, γ = 0.4 V1/2, 2∣φf∣ = 0.6 V, VTO = 1 V, kn′ = 100 μA/V2, (W/L) = 10, and λ = 0.1 V−1. The channel length modulation is applicable only in the saturation region. a. Determine the charging current to CL right after the rising edge of the input. Assume that the capacitor is completely discharge at the beginning of the transition. Make sure that you include all applicable device parameters in your calculations. b. Determine the charging current to CL when the output voltage is at 50% of VDD. Again, make sure that you include all applicable device parameters in your calculation. c. Use the results from parts a and b to estimate the low-to-high propagation delay (tpLH) of the NMOS switch in Figure 1. d. Use PSPICE and measure the tpLH of the circuit in Figure 1 and compare your results with part c. (Hint: the .model for this device is shown below of this page)
Solution
1 0