Question

Notify Me Bookmark

For the simple MOSFET amplifier with active load shown in Figure 4, the tranistor parameters are: VThN = 1 V, VTh1 = VTh2 = -1 V, KP1 = KP2 = KN = 100 uA/V2 , and lambda1 = lambda2 = lambdan = 0.02 V-1 . Let V + = 10 V and IREF = 50 uA. Determine the open circuit small-signal gain.

For the simple MOSFET amplifier with active load shown in Figure 4, the tranistor parameters are: VThN = 1 V, VTh1 = VTh2 = -1 V, KP1 = KP2 = KN = 100 uA/V2 , and lambda1 = lambda2 = lambdan = 0.02 V-1 . Let V + = 10 V and IREF = 50 uA. Determine the open circuit small-signal gain.

Image text
For the simple MOSFET amplifier with active load shown in Figure 4, the tranistor parameters are: VThN = 1 V, VTh1 = VTh2 = -1 V, KP1 = KP2 = KN = 100 uA/V2 , and lambda1 = lambda2 = lambdan = 0.02 V-1 . Let V + = 10 V and IREF = 50 uA. Determine the open circuit small-signal gain.

Detailed Answer

0 0

Please enter your email here. You will get email when this question is answered by our tutor.

Doubtrix Logo

Problem is not yet solved!

Click on Notify me to get email when question is answered.

Join Doubtrix with 7-days free trial

  • Icon Correct & Verified Answers
  • Icon No AI-Generated Answers
  • Icon Video Solution for Difficult Questions
  • Icon Work With Experts to Reach at Correct Answers
Login Sign Up

Similar/Related Questions

D4.72 For the cascode circuit in Figure 4.51 in the text, the transistor parameters are: VTN1 = VTN2 = 1 V, Kn1 = Kn2 = 2 mA/V2 , and lambda1 = lambda2 = 0. (a) Let RS = 1.2 kohm and R1 + R2 + R3 = 500 kohm. Design the circuit such that IDQ = 3 mA and VDSQ1 = VDSQ2 = 2.5 V. (b) Determine the small-signal voltage gain Av = vo/vi.

D4.72 For the cascode circuit in Figure 4.51 in the text, the transistor parameters are: VTN1 = VTN2 = 1 V, Kn1 = Kn2 = 2 mA/V2 , and lambda1 = lambda2 = 0. (a) Let RS = 1.2 kohm and R1 + R2 + R3 = 500 kohm. Design the circuit such that IDQ = 3 mA and VDSQ1 = VDSQ2 = 2.5 V. (b) Determine the small-signal voltage gain Av = vo/vi.
Solution
1 0

Ex 4.2: For the circuit shown in Figure 4.1, VDD = 3.3 V and RD = 10 kΩ. The transistor parameters are VTN = 0.4 V, kn′ = 100 μA/V2, W/L = 50, and λ = 0.025 V−1. Assume the transistor is biased such that IDQ = 0.25 mA. (a) Verify that the transistor is biased in the saturation region. (b) Determine the small-signal parameters gm and ro. (c) Determine the small-signal voltage gain. (Ans. (a) VGSQ = 0.716 V and VDSQ = 0.8 V so that VDS > VDS (sat); (b) gm = 1.58 mA/V, ro = 160 kΩ; (c) -14.9) Figure 4.1 NMOS common-source circuit with time-varying signal source in series with gate dc source

Ex 4.2: For the circuit shown in Figure 4.1, VDD = 3.3 V and RD = 10 kΩ. The transistor parameters are VTN = 0.4 V, kn′ = 100 μA/V2, W/L = 50, and λ = 0.025 V−1. Assume the transistor is biased such that IDQ = 0.25 mA. (a) Verify that the transistor is biased in the saturation region. (b) Determine the small-signal parameters gm and ro. (c) Determine the small-signal voltage gain. (Ans. (a) VGSQ = 0.716 V and VDSQ = 0.8 V so that VDS > VDS (sat); (b) gm = 1.58 mA/V, ro = 160 kΩ; (c) -14.9) Figure 4.1 NMOS common-source circuit with time-varying signal source in series with gate dc source
Solution
0 0

Design a MOSFET differential amplifier with active load as shown in the schematic diagram to the right. The specifications and constrains are: - The differential gain should be 100 V/V or greater (with no resistive load connected to the M2 drain.) - The common-mode gain should be 0.10 V/V or less. The transistor characteristics are: - The NMOS devices, M1 and M2, have the following parameters: Kn = 500 μA/V2, VTN = 2.0 V, and λn = 0.01 V−1. - The PMOS devices, M3 and M4, have the following parameters: Kp = 250 μA/V2, VTP = −1.0 V, and λp = 0.01 V−1. - The NMOS devices, M5 and M6, have the following parameters: Kn = 750 μA/V2, VTN = 1.0 V, and λn = 0.01 V−1. Determine an acceptable current value for IQ.
Solution
1 0